Биполярный транзистор 2SD1567
Даташит. Аналоги
Наименование производителя: 2SD1567
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO220
- подбор биполярного транзистора по параметрам
2SD1567
Datasheet (PDF)
8.4. Size:212K inchange semiconductor
2sd1563a.pdf 
isc Silicon NPN Power Transistor 2SD1563ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.5. Size:210K inchange semiconductor
2sd1564.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1564DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audi
8.6. Size:210K inchange semiconductor
2sd1565.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLUTE
8.7. Size:213K inchange semiconductor
2sd1562.pdf 
isc Silicon NPN Power Transistor 2SD1562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1085Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
8.8. Size:199K inchange semiconductor
2sd1566.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching
8.9. Size:212K inchange semiconductor
2sd1563.pdf 
isc Silicon NPN Power Transistor 2SD1563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
8.10. Size:126K inchange semiconductor
2sd1562 2sd1562a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: 3DG5088
| TD13005SMD
| 9016H
| 2S326
| DMC364A4
| GI2716
| 2N4261UB
