Справочник транзисторов. 2SD1613

 

Биполярный транзистор 2SD1613 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1613

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 5000

Корпус транзистора: TO126

Аналоги (замена) для 2SD1613

 

 

2SD1613 Datasheet (PDF)

4.1. 2sd1618.pdf Size:176K _sanyo

2SD1613
2SD1613

Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit:mm Very small size making it easy to provide high- 2038 density, small-sized hybrid ICs. [2SB1118/2SD1618] E : Emitter C : Collector B : Base ( ) : 2SB1118 SANY

4.2. 2sd1619.pdf Size:122K _sanyo

2SD1613
2SD1613

Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions Very small size making it easy to provide high- unit:mm density, small-sized hybrid ICs. 2038 [2SB1119/2SD1619] E : Emitter C : Collector B : Base ( ) : 2SB1119 SANYO : PCP (Bottom view) Specifications Absolute Maximum Ra

 4.3. 2sd1616.pdf Size:156K _nec

2SD1613
2SD1613

4.4. 2sd1616a.pdf Size:98K _nec

2SD1613
2SD1613

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1116A ABS

 4.5. 2sd1614.pdf Size:214K _nec

2SD1613
2SD1613

4.6. 2sd1615a.pdf Size:52K _nec

2SD1613
2SD1613

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB1115, 2SD111

4.7. 2sd1615.pdf Size:49K _nec

2SD1613
2SD1613

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB1115, 2SD111

4.8. 2sd1611.pdf Size:64K _panasonic

2SD1613
2SD1613

Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE High collector to base voltage VCBO 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of small electr

4.9. 2sd1609 2sd1610.pdf Size:32K _hitachi

2SD1613
2SD1613

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55

4.10. 2sd1616a.pdf Size:341K _secos

2SD1613
2SD1613

2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Power dissipation A D Millimeter REF. Min. Max. B A 4.40 4.70 CLASSIFICATION OF hFE (1) B 4.30 4.70 C 12.70 - D 3.30 3.81 Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U E 0.36 0.56 F 0.36 0.51 E C

4.11. 2sd1616a.pdf Size:193K _lge

2SD1613
2SD1613

2SD1616A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) PC Collec

4.12. 2sd1616.pdf Size:1161K _wietron

2SD1613
2SD1613

2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2SD16116 2SD1616A Unit Collector-Emitter Voltage V CEO 50 60 Vdc Collector-Base Voltage VCBO 60 120 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 0.75 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to

4.13. 2sd1618.pdf Size:1259K _kexin

2SD1613
2SD1613

SMD Type Transistors NPN Transistors 2SD1618 ■ Features 1.70 0.1 ● Low collector-to-emitter saturation voltage. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. 0.42 0.1 0.46 0.1 ● Complementary to 2SB1118 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

4.14. 2sd1614.pdf Size:733K _kexin

2SD1613
2SD1613

SMD Type Transistors NPN Transistors 2SD1614 1.70 0.1 ■ Features ● High DC Current Gain:hFE 135 to 600. ● Low VCE(sat) ● Complementary to 2SB1114 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 C

4.15. 2sd1615a.pdf Size:1224K _kexin

2SD1613
2SD1613

SMD Type Transistors NPN Transistors 2SD1615A 1.70 0.1 ■ Features ● Low VCE(sat) ● Complementary to 2SB1115A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A

4.16. 2sd1615.pdf Size:1176K _kexin

2SD1613
2SD1613

SMD Type Transistors NPN Transistors 2SD1615 1.70 0.1 ■ Features ● Low VCE(sat) ● Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Col

4.17. 2sd1619.pdf Size:1280K _kexin

2SD1613
2SD1613

SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 ■ Features ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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