2SD1613 Todos los transistores

 

2SD1613 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1613

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 120 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: TO126

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2SD1613 Datasheet (PDF)

8.1. 2sd1619.pdf Size:122K _sanyo

2SD1613
2SD1613

Ordering number:1785APNP/NPN Epitaxial Planar Silicon Transistors2SB1119/2SD1619LF Amplifier, Electronic Governor ApplicationsFeatures Package Dimensions Very small size making it easy to provide high-unit:mmdensity, small-sized hybrid ICs.2038[2SB1119/2SD1619]E : EmitterC : CollectorB : Base( ) : 2SB1119SANYO : PCP(Bottom view)SpecificationsAbsolute Maxi

8.2. 2sd1618.pdf Size:176K _sanyo

2SD1613
2SD1613

Ordering number:1784BPNP/NPN Epitaxial Planar Silicon Transistors2SB1118/2SD1618Low-Voltage High-Current Amplifier,Muting ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Very small size making it easy to provide high-2038density, small-sized hybrid ICs.[2SB1118/2SD1618]E : EmitterC : CollectorB : Base( ) : 2SB111

 8.3. 2sd1616.pdf Size:156K _nec

2SD1613
2SD1613

8.4. 2sd1616a.pdf Size:98K _nec

2SD1613
2SD1613

DATA SHEETSILICON TRANSISTORS2SD1616, 2SD1616ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat):VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatilityPT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1

 8.5. 2sd1615a.pdf Size:52K _nec

2SD1613
2SD1613

DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in HybridIntegrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

8.6. 2sd1614.pdf Size:214K _nec

2SD1613
2SD1613

8.7. 2sd1615.pdf Size:49K _nec

2SD1613
2SD1613

DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especiallyin Hybrid Integrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

8.8. 2sd1611.pdf Size:64K _panasonic

2SD1613
2SD1613

Power Transistors2SD1611Silicon NPN triple diffusion planar type DarlingtonUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Features1.5max. 1.1max.High foward current transfer ratio hFEHigh collector to base voltage VCBO0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin to2.54 0.3the printed circuit board, etc. of sma

8.9. 2sd1609 2sd1610.pdf Size:32K _hitachi

2SD1613
2SD1613

2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEB

8.10. 2sd1616a.pdf Size:341K _secos

2SD1613
2SD1613

2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation ADMillimeter REF.Min. Max.BA 4.40 4.70CLASSIFICATION OF hFE (1) B 4.30 4.70C 12.70 -D 3.30 3.81Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-UE 0.36 0.56F 0.36 0.51

8.11. 2sd1616a.pdf Size:193K _lge

2SD1613
2SD1613

2SD1616A(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)PC C

8.12. 2sd1616.pdf Size:1161K _wietron

2SD1613
2SD1613

2SD16162SD1616ANPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2SD16116 2SD1616A UnitCollector-Emitter Voltage VCEO 50 60 VdcCollector-Base Voltage VCBO60 120 VdcEmitter-Base Voltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 0.75Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55

8.13. 2sd1619.pdf Size:1280K _kexin

2SD1613
2SD1613

SMD Type TransistorsNPN Transistors2SD16191.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs. Complementary to 2SB11190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt

8.14. 2sd1615a.pdf Size:1224K _kexin

2SD1613
2SD1613

SMD Type TransistorsNPN Transistors2SD1615A1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A

8.15. 2sd1618.pdf Size:1259K _kexin

2SD1613
2SD1613

SMD Type TransistorsNPN Transistors2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11181.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

8.16. 2sd1614.pdf Size:733K _kexin

2SD1613
2SD1613

SMD Type TransistorsNPN Transistors2SD16141.70 0.1 Features High DC Current Gain:hFE 135 to 600. Low VCE(sat) Complementary to 2SB11140.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 C

8.17. 2sd1615.pdf Size:1176K _kexin

2SD1613
2SD1613

SMD Type TransistorsNPN Transistors2SD16151.70 0.1 Features Low VCE(sat) Complementary to 2SB11150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A Col

8.18. 2sd1619.pdf Size:212K _inchange_semiconductor

2SD1613
2SD1613

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1619DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V (Min)(BR)CEOComplement to Type 2SB1119100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)S

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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