Справочник транзисторов. 2SD1644

 

Биполярный транзистор 2SD1644 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1644
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 95 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10000
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SD1644

 

 

2SD1644 Datasheet (PDF)

 8.1. Size:762K  sanyo
2sd1649.pdf

2SD1644
2SD1644

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 8.2. Size:48K  rohm
2sd1646.pdf

2SD1644

 8.3. Size:52K  rohm
2sd1647.pdf

2SD1644

 8.4. Size:104K  panasonic
2sd1645.pdf

2SD1644
2SD1644

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.5. Size:153K  panasonic
2sd1640.pdf

2SD1644
2SD1644

 8.6. Size:107K  panasonic
2sd1641.pdf

2SD1644
2SD1644

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.7. Size:209K  inchange semiconductor
2sd1646.pdf

2SD1644
2SD1644

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

 8.8. Size:215K  inchange semiconductor
2sd1649.pdf

2SD1644
2SD1644

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 8.9. Size:205K  inchange semiconductor
2sd1640.pdf

2SD1644
2SD1644

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

 8.10. Size:203K  inchange semiconductor
2sd1647.pdf

2SD1644
2SD1644

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

Другие транзисторы... 2SD1637 , 2SD1638 , 2SD1639 , 2SD164 , 2SD1640 , 2SD1641 , 2SD1642 , 2SD1643 , 2SD1047 , 2SD1645 , 2SD1646 , 2SD1647 , 2SD1648 , 2SD1649 , 2SD165 , 2SD1650 , 2SD1651 .

 

 
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