2SD1644 Datasheet and Replacement, Transistor Equivalent Finder, Cross Reference. AllTransistors.com

8.1. Size:762K sanyo
2sd1649.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

8.2. Size:48K rohm
2sd1646.pdf pdf_icon

8.3. Size:52K rohm
2sd1647.pdf pdf_icon

8.4. Size:104K panasonic
2sd1645.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.5. Size:153K panasonic
2sd1640.pdf pdf_icon

8.6. Size:107K panasonic
2sd1641.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.7. Size:209K inchange semiconductor
2sd1646.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

8.8. Size:215K inchange semiconductor
2sd1649.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.9. Size:205K inchange semiconductor
2sd1640.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

8.10. Size:203K inchange semiconductor
2sd1647.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

2SD1644 Datasheet (PDF)

Keywords - 2SD1644 transistor datasheet

AllTransistors(C)

All Transistors. 2SD1644 Datasheet

2SD1644 Datasheet and Replacement

2SD1644 Datasheet (PDF)

Keywords - 2SD1644 transistor datasheet

LIST

Last Update

Popular searches

AllTransistors(C)