Биполярный транзистор 2SD1649 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1649
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: ISO247
2SD1649 Datasheet (PDF)
2sd1649.pdf
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2sd1649.pdf
isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sd1645.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1641.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1646.pdf
isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX
2sd1640.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
2sd1647.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050