Справочник транзисторов. 2SD1659

 

Биполярный транзистор 2SD1659 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1659

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 175 °C

Статический коэффициент передачи тока (hfe): 10000

Корпус транзистора: SOT33

Аналоги (замена) для 2SD1659

 

2SD1659 Datasheet (PDF)

4.1. 2sd1650.pdf Size:60K _st

2SD1659
2SD1659

SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS .REFRACTORY/GOLD METALLIZATION .DOUBLE STEP INPUT/OUTPUT MATCH .850-960 MHz CLASS AB LINEAR .COMMON EMITTER .P = 60 W MIN. WITH 7 dB MIN GAIN OUT .400 6LFL (M169) epoxy sealed ORDER CODE BRANDING SD1650 SCELL500 PIN CONNECTION DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 ex

4.2. 2sd1658.pdf Size:197K _toshiba

2SD1659
2SD1659

2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B • Zener diode included between c

 4.3. 2sd1656.pdf Size:346K _sanyo

2SD1659
2SD1659

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.4. 2sd1654.pdf Size:48K _sanyo

2SD1659

 4.5. 2sd1653.pdf Size:347K _sanyo

2SD1659
2SD1659

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.6. 2sd1652.pdf Size:356K _sanyo

2SD1659
2SD1659

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.7. 2sd1651c.pdf Size:211K _sanyo

2SD1659
2SD1659

Ordering number : ENN7086 2SD1651C www.DataSheet4U.com NPN Triple Diffused Planar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. unit : mm • High breakdown voltage(VCBO=1500V). 2174A • High reliability(Adoption of HVP process). [2SD1651C] 5.6 • Adoption of MBIT process. 3.4 16.0 3.1 • On-chip

4.8. 2sd1655.pdf Size:47K _sanyo

2SD1659

4.9. 2sd1651.pdf Size:41K _wingshing

2SD1659

NPN TRIPLE DIFFUSED 2SD1651 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current (DC

4.10. 2sd1650.pdf Size:86K _wingshing

2SD1659

2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PML SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Colle

4.11. 2sd1651.pdf Size:81K _jmnic

2SD1659
2SD1659

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1651 DESCRIPTION · ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25

4.12. 2sd1650.pdf Size:85K _jmnic

2SD1659
2SD1659

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1650 DESCRIPTION · ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=2

4.13. 2sd1651.pdf Size:124K _inchange_semiconductor

2SD1659
2SD1659

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1651 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Built-in damper diode Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Ў¤ ABSOLUTE MAXI

4.14. 2sd1650.pdf Size:124K _inchange_semiconductor

2SD1659
2SD1659

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1650 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Built-in damper diode Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Ў¤ ABSOLUTE MAXI

4.15. 2sd1656.pdf Size:231K _inchange_semiconductor

2SD1659
2SD1659

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1656 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter

4.16. 2sd1654.pdf Size:116K _inchange_semiconductor

2SD1659
2SD1659

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1654 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage;high speed Ў¤ High reliability. APPLICATIONS Ў¤ For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) S

4.17. 2sd1653.pdf Size:231K _inchange_semiconductor

2SD1659
2SD1659

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1653 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter

4.18. 2sd1652.pdf Size:125K _inchange_semiconductor

2SD1659
2SD1659

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1652 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Built-in damper diode Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For color TV horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Ў¤ AB

4.19. 2sd1655.pdf Size:116K _inchange_semiconductor

2SD1659
2SD1659

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1655 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage;high speed Ў¤ High reliability. APPLICATIONS Ў¤ For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) S

Другие транзисторы... 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 

 
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