isc Silicon NPN Darlington Power Transistor 2SD1670DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 10AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low speed high current s

Transistor2SD1679Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.1518V zener diode is built in between collector and base.Low collector to emitter saturation voltage VCE(sat).1High foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and3

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 7AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor lo

isc Silicon NPN Power Transistor 2SD1677DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1678DESCRIPTIONHigh DC Current Gain-h = 750(Min)@ I = 15AFE CHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsA