2SD1670 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 10A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current s

Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 7A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For lo

isc Silicon NPN Power Transistor 2SD1677 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 DESCRIPTION High DC Current Gain-h = 750(Min)@ I = 15A FE C High Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications A