Справочник транзисторов. 2SD1682R

 

Биполярный транзистор 2SD1682R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1682R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 16 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: ISO126

 Аналоги (замена) для 2SD1682R

 

 

2SD1682R Datasheet (PDF)

 7.1. Size:149K  sanyo
2sd1682.pdf

2SD1682R
2SD1682R

Ordering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : Collector( ) :

 8.1. Size:146K  sanyo
2sd1683.pdf

2SD1682R
2SD1682R

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C

 8.2. Size:60K  sanyo
2sb1143 2sd1683.pdf

2SD1682R
2SD1682R

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

 8.3. Size:146K  sanyo
2sd1684.pdf

2SD1682R
2SD1682R

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2

 8.4. Size:133K  sanyo
2sd1681.pdf

2SD1682R
2SD1682R

Ordering number:2020APNP/NPN Epitaxial Planar Silicon Transistors2SB1141/2SD168118V/1.2A Switching ApplicationsApplications Package Dimensions Converters, relay drivers, low-voltage and highunit:mmpower AF Amplifier.2042A[2SB1141/2SD1681]Features Low saturation voltage and excellent linearity of hFE. Wide ASO.B : BaseC : CollectorE : Emitter( ) : 2SB1141

 8.5. Size:113K  sanyo
2sd1685.pdf

2SD1682R
2SD1682R

Ordering number:EN2042ANPN Epitaxial Planar Silicon Transistor2SD168520V/5A Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2042B[2SD1685]8.0Features4.03.31.0 1.0 Low saturation voltage. Large current capacity.3.0 Fast switching time. No insulator required when mounting becau

 8.6. Size:213K  inchange semiconductor
2sd1683.pdf

2SD1682R
2SD1682R

isc Silicon NPN Power Transistor 2SD1683DESCRIPTIONHigh Collector Current-I = 4ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2ACE(sat) CComplement to Type 2SB1143Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in voltage regulations, relay drivers, lampdrivers and electrical equipment.ABSOLUTE MAX

 8.7. Size:212K  inchange semiconductor
2sd1684.pdf

2SD1682R
2SD1682R

isc Silicon NPN Power Transistor 2SD1684DESCRIPTION Collector Saturation VoltageLow: V = -0.5V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1144Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.8. Size:208K  inchange semiconductor
2sd1680.pdf

2SD1682R
2SD1682R

isc Silicon NPN Power Transistor 2SD1680DESCRIPTIONCollector-Base Breakdown Voltage-: V = 330V(Min)(BR)CBOHigh Power DissipationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 

Back to Top