2SD1696 - Даташиты. Аналоги. Основные параметры

DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Large current capacity and low VCE(sat) IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25

DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. T

DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter

UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 1 1 LARGE CURRENT TO-220F1 TO-220 FEATURES *High Power Dissipation 1 1 *Complementary to 2SB1151 TO-251 TO-252 1 1 TO-126C TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter

SMD Type Transistors NPN Transistors 2SD1699 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V

isc Silicon NPN Power Transistor 2SD1691 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1151 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Darlington Power Transistor 2SD1692 DESCRIPTION Collector Emitter Sustaining Voltage V = 100V(min.) CEO(SUS) DC Current Gain h = 2000(Min.) @ I = 1.5 A FE C Complement to Type 2SB1149 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier applications. ABSOLUTE MAXI