2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta =

Ordering number:EN2110BNPN Epitaxial Planar Silicon Transistor2SD1799Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2045B[2SD1799]6.5Features2.35.00.54 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E

Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1

Ordering number : EN72002SD1710CSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon Transistor2SD1710C500V / 7A Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting.SpecificationsAbsolute Maximum Ratings at Ta=25

Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE

Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE

2SD1781KDatasheetMedium Power Transistor (32V, 800mA)lOutlinelParameter Value SMT3VCEO32VIC800mASOT-346SC-59 lFeaturesl1)Very low VCE(sat).lInner circuitl VCE(sat)=0.1V(Typ.)(IC/IB=500mA/50mA)2)Higt current capacity in compact package.3)Complements the 2SB1197K.lApplicationl

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767high current, IC=0.7A. 4.01.0 2.5 0.52) Complements the 2SB1189 / 2SB1238. (1)(2) Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollec

2SD1767 / 2SD1859TransistorsMedium power transistor (80V, 0.7A)2SD1767 / 2SD1859 External dimensions (Units : mm) Features1) High breakdown voltage, BVCEO=80V, and2SD17674.0high current, IC=0.7A.1.0 2.5 0.52) Complements the 2SB1189 / 2SB1238.(1)(2)(3) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollector-emi

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 Features External dimensions (Units : mm)1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.2 (IC/IB = 2A / 0.2A) 2.3 +0.26.50.2 -0.1C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.9 Structure0.50.10.550.12.30.2 2

2SD1782KFRA2SD1782KTransistors AEC-Q101 QualifiedPower Transistor (80V, 0.5A) 2SD1782K2SD1782KFRA External dimensions (Unit : mm) Features 1) Low VCE(sat).2.90.2VCE(sat) =0.2V(Typ.) 1.1+0.21.90.2 -0.1(IC / IB=0.5 A / 50mA) 0.80.10.95 0.952) High VCEO,VCEO=80V (1) (2)0~0.12SB1198KFRA3) Complements the 2SB1198K. (3)+0.10.15-0.06+0.10.4-0.0

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863TransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units : mm) Features1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.11.5+0.21.60.1 -0.13) Good hFE linearity4) Low VCE (sat)5) Complements the 2SB1260 / (1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB1181 0.40.1 0.50.

2SD1782KDatasheetPower Transistor (80V, 500mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO80VIC500mASMT3lFeatures lInner circuitl l1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA)2)High breakdown voltage. BVCEO=80V3)Complements the 2SB1198KlApplicationlDRIVERlPackaging specificationslBasic

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

TransistorsPower Transistor (80V, 0.5A)2SD1782KFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 0.5A / 50mA)2) High VCEO, VCEO = 80V3) Complements the 2SB1198K.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-222-D93)271Transistors 2SD1782KFElectrical characteristics (Ta = 25_

2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4

2SD1757KTransistorsPower Transistor (15V, 0.5A)2SD1757K External dimensions (Units : mm) Features1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA)2) Optimal for muting.1.6 Absolute maximum ratings (Ta = 25C)2.8Parameter Symbol Limits UnitCollector-base voltage VCBO 30 V0.3to0.6Collector-emitter voltage VCEO 15 VEach lead has same dimensionsEmitter-base voltage VEBO

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor

2SD1781KFRA2SD1781KTransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.8A) 2SD1781K2SD1781KFRA External dimensions (Unit : mm) Features1) Very Low VCE(sat).2.90.2VCE(sat) = 0.1V(Typ.) 1.1+0.21.90.2 -0.1 IC / IB= 500 A / 50mA 0.80.10.95 0.952) High current capacity in compact package.(1) (2)0~0.13) Complements the 2SB1197K2SB1197K.(3)+0

2SD1757KDatasheetPower Transistor (15V, 500mA)lOutlinelParameter Value SMT3VCEO15VIC500mASOT-346SC-59 lFeaturesl1)Low VCE(sat). (Typ.8mV at IC/IB=10/1mA)lInner circuitl2)Optimal for muting.lApplicationlMUTING

2SD1759 / 2SD1861TransistorsPower transistor (40V, 2A)2SD1759 / 2SD1861 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SD17592) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SB1183 / 2SB1239.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(2) CollectorEIAJ : SC-

Power Transistors2SD1707Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1156 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install

Power Transistors2SD1755Silicon NPN epitaxial planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High forward current transfer ratio hFE which has satisfactorylinearity2.3 0.2High emitter to base voltage VEBO4.6 0.4I type package enabling direct soldering

Power Transistors2SD1754, 2SD1754ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE2.3 0.2I type package enabling direct soldering of

Power Transistors2SD1745Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1175Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder

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Power Transistors2SD1750, 2SD1750ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1180 and 2SB1180AFeatures High foward current transfer ratio hFE1.1 0.1 0.85 0.10.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin tothe pr

Power Transistors2SD1746Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1176Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder

Power Transistors2SD1753Silicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.23.0 0.2For power amplification with high forward current transfer ratio1.1 0.1 0.85 0.1Features0.75 0.1 0.4 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE2.3 0.2I type package enabling direct soldering of the radia

Power Transistors2SD1705Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1154 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install

Power Transistors2SD1773Silicon NPN triple diffusion planar type DarlingtonFor midium speed switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB11935.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Rat

Power Transistors2SD1742, 2SD1742ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For low-freauency power amplification3.0 0.2Complementary to 2SB1172 and 2SB1172AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)I type package e

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Power Transistors2SD1772, 2SD1772ASilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SB1192 and 2SB1192A5.5 0.2 2.7 0.2Features 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolu

Power Transistors2SD1749, 2SD1749ASilicon NPN triple diffusion planar type DarlingtonFor low-freauency power amplification Unit: mm7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1179 and 2SB1179AFeatures High foward current transfer ratio hFE1.1 0.1 0.85 0.1 High-speed switching0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin toth

Power Transistors2SD1752, 2SD1752ASilicon NPN epitaxial planar typeFor power amplification and low-voltage switchingUnit: mm7.0 0.3 3.5 0.2Complementary to 2SB1148 and 2SB1148A3.0 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE0.75 0.1 0.4 0.1

Power Transistors2SD1747, 2SD1747ASilicon NPN epitaxial planar typeFor power switchingUnit: mm7.0 0.3 3.5 0.2Complementary to 2SB11773.0 0.2Features Low collector to emitter saturation voltage VCE(sat)1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE0.75 0.1 0.4 0.1 Large collector current IC I type package enabling direct sol

Power Transistors2SD1751Silicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Complementary to 2SB1170Features1.1 0.1 0.85 0.10.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactorylinearity Low collector to emitter saturation voltage VCE(sat)2.3 0.2 I type package enabling direct solder

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Power Transistors2SD1776, 2SD1776ASilicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mmFeatures High foward current transfer ratio hFE10.0 0.2 4.2 0.2 Satisfactory linearity of foward current transfer ratio hFE 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink withone screw 3.1 0

Power Transistors2SD1744Silicon NPN epitaxial planar typeUnit: mmFor power switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1174Features1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current IC2.3 0.2I type package enabling direct solder

Power Transistors2SD1775, 2SD1775ASilicon NPN triple diffusion planar typeUnit: mmFor high-speed switching and high current amplification ratio 8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE1.5max. 1.1max. N type package enabling direct soldering of the radiating fin tothe pr

Power Transistors2SD1771, 2SD1771ASilicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1For TV vertical deflection outputComplementary to 2SB1191 and 2SB1191AFeatures 1.5max. 1.1max. High collector to emitter VCEO0.8 0.1 0.5max. Large collector power dissipation PC N type package enabling direct soldering of the

Power Transistors2SD1719Silicon NPN triple diffusion planar typeFor power amplification with high forward current transferUnit: mm8.50.2 3.40.3ratio6.00.2 1.00.1 Features High forward current transfer ratio hFE which has satisfactory lin-0 to 0.4earityR = 0.50.80.1R = 0.52.540.3 High emitter-base voltage (Collector open) VEBO1.00.11.4

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Power Transistors2SD1743, 2SD1743ASilicon NPN triple diffusion planar typeUnit: mm7.0 0.3 3.5 0.2For power amplification3.0 0.2Complementary to 2SB1173 and 2SB1173AFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1Low collector to emitter saturation voltage VCE(sat)I type package enabling direct

Power Transistors2SD1748, 2SD1748ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor low-freauency power amplification7.0 0.3 3.5 0.23.0 0.2Complementary to 2SB1178 and 2SB1178AFeaturesHigh foward current transfer ratio hFE1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1High-speed switchingI type package enabling direct soldering of the radiating fin tothe

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTCs advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte

2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat)

2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES High Breakdown Voltage and Current 4 Excellent DC Current Gain Linearity Complementary to 2SB1189 123B C AE CLASSIFICATION OF hFE ECProduct-Rank 2SD1767-P 2SD1767-Q 2SD1767-R B D

2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free D-Pack (TO-252)FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184 CLASSIFICATION OF hFE AProduct-Rank 2SD1760-P 2SD1760-Q 2SD1760-RCBDRange 82~180 120~270 180~390

NPN TRIPLE DIFFUSED2SD1711 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

Silicon Diffused Power Transistor2SD1710GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflectioncircuites of colour television receiversTO-3PMLQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1189 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR (NPN) TO-252-2L FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 1. BASE Complements the 2SB1184. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1766 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) 2. COLLECTOR Complements to 2SB1188 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate TransistorsTO-252-2L 2SD1758 TRANSISTOR (NPN)1.BASE2.COLLECTOR FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A)3.EMITTER213 Equivalent Circuit D1758=Device code D 1 7 5 8Solid dot=Green moldinn compound device, XXXXif none,the normal deviceXXXX=CodeMAXIM

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SD1782 TRANSISTOR (NPN)FEATURES 1. BASE Low VCE(sat)2. EMITTER High BVCEO3. COLLECTOR Complements the 2SB1198MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 200 V VCEO Collector-

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1788 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 100 V VCEO Collector-

Equivalent CcircuitBBuilt-in Avalanche Diode for Surge AbsorbingDarlington 2SD1796(3k)(150)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)SymbolSymbol 2SD1796 Unit Conditions 2SD1796 Unit

Equivalent CcircuitBDarlington 2SD1769(2.5k)(200)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)SymbolSymbol 2SD1769 Unit Conditions 2SD1769 Unit0.24.80.210.20.

Equivalent CcircuitBDarlington 2SD1785(2.5k)(200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions FM20(TO220F)Symbol 2SD1785 Unit Symbol Conditions 2SD1785 Unit

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1791 Case : ITO-220(TP7L10) Unit : mm7A NPNRATINGSAbsolute Maximum Ratings ConditionsItem Symbol Ratings UnitStorage Temperature Tstg -55+150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 VCollector to Emitter Voltage VCEO 100 VEmitter to Base VoltageVEBO 7 VCollector Current DC I

2SD1766TRANSISTOR (NPN)FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 40 V3. EMITTER 3 VCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 2

2SD1757K TRANSISTOR (NPN)SOT-23 FEATURES Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temp

2SD1781K SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low voltage High saturation current capability 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

2SD1761(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3FeaturesLow collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in

2SD1760(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5

2SD1766SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) MIN0.53 Complements to 2SB1188 0.400.480.442x)0.13 B0.35 0.37 1.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

2SD1757K SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Optimal for muting. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collec

2SD1758(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 2 A PC

FM120-M WILLASTHRU 2SD1766 SOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free Produc Package outlineFeaturesTRANSISTOR c(NPN) ss design, excellent power dissipation offers Bat h proce bFEATURES etter reverse leakage current and thermal resistance.SOT-89 SOD-123H Low profile surfa

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltagehigh speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltagehigh speed switching. / Applications Use in horizontal deflection circuites of color TV. /

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Stor

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 APeak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A0.5 Collector Power Dissipation PC W 2 1) Junction T

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem

SMD Type TransistorsNPN Transistors2SD1745TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features5.30+0.2 0.50 +0.8-0.2-0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC0.1270.80+0.1 max-0.1 Complementary to 2SB11752.3 0.60+ 0.1 1 Base- 0.1+0.15

SMD Type TransistorsNPN Transistors2SD1781 (2SD1781K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Very Low VCE(sat). High current capacity in compact package. Complimentary to 2SB1197(2SB1197K) 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit C

SMD Type TransistorsNPN Transistors2SD1746TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)0.127-0.1 Large collector current IC 0.80+0.1 max Complementary to 2SB11762.3 0.60+ 0.1 1 Base- 0.1+0.15

SMD Type TransistorsNPN Transistors2SD17671.70 0.1 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.0.42 0.10.46 0.1 Complementary to 2SB11891.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD1760TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low VCE (sat) Complementary to 2SB11840.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD1742TO-252 Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.10.80-0.1max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172+ 0.12.3 0.60- 0.1 1 Base+0.154.60 -0.152 Co

SMD Type TransistorsNPN Transistors2SD1733TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.127+0.10.80-0.1max Complementary to 2SB1181+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parame

SMD Type TransistorsNPN Transistors2SD1766SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V High-speed switching.0.42 0.10.46 0.1 Complements to 2SB11881.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector

SMD Type TransistorsNPN Transistors2SD1758TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE (sat) Complementary to 2SB11820.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type TransistorsNPN Transistors2SD1742ATO-252 Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2-0.7 Features High forward current transfer ratio hFE which has satisfactory linearity0.127+0.10.80-0.1max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172A+ 0.12.3 0.60- 0.1 1 Base+0.154.60 -0.152

SMD Type TransistorsNPN Transistors2SD1782SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect

SMD Type TransistorsNPN Transistors2SD1784SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=30V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

CHENMKO ENTERPRISE CO.,LTD2SD1781KGPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1500mA). * Suitable for high packing density.* Low voltage (Max.=32V) .* High satur

2SD1781Plastic-Encapsulate TransistorsSOT-23 (NPN) FEATURES Very low VCE(sat). VCE(sat)

2SD1766NPN TransistorsSMD Ty p e Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V3 High-speed switching.2 Complements to 2SB11881 1.Base2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VC

2SD1766Medium Power Transistor Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). hFE Classification Absolute Maximum Ratings Ta = 25 *1. Pw=20ms. *2. 40X40X 0.7mm Ceramic board. Electrical Characteristics Ta = 25 REV.08 1 of 1

2SD1781KSilicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197KExcellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 42SD1781KELECTRICAL CHARACTERISTICS @ Ta=25 unle

isc Silicon NPN Power Transistor 2SD1707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 8ACE(sat) CComplement to Type 2SB1156Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

isc Silicon NPN Power Transistor 2SD1717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1162Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1735DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1789DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1731DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1761DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1187Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1711DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1710DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1712DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1715DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1160Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 2SD1718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1163Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 6ACE(sat) CComplement to Type 2SB1154Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

isc Silicon NPN Darlington Power Transistor 2SD1773DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEComplement to Type 2SB1193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1709DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1734DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1763ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SB1186AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1760DESCRIPTIONLow Collector Saturation Voltage-: V = 0.5V(Typ)@ I = 2ACE(sat) CComplements the 2SB1184Good Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1793DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

isc Silicon NPN Darlington Power Transistor 2SD1756DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 170V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage high current amplifier applications.ABSOL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1763DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SB1186Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMU

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1790DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD1736DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1732DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1772DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB1192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Darlington Power Transistor 2SD1765DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max.) @I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min.) @ I = 1A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1764DESCRIPTIONHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CBullt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned forr MotorRelay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1737DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1758DESCRIPTIONLow Collector Saturation Voltage-: V = 0.5V(Typ)@ I = 2ACE(sat) CComplement to Type 2SB1182Good Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversA

isc Silicon NPN Power Transistor 2SD1762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1185Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1788DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1730DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1778DESCRIPTIONHigh Collector Current:: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1334Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1783DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputsta

isc Silicon NPN Power Transistor 2SD1706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB1155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

isc Silicon NPN Power Transistor 2SD1716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1161Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1714DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1738DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION With TO-220Fa package Complement to type 2SB1192/1192A Large collector power dissipation APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 Emit

isc Silicon NPN Power Transistor 2SD1770DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB1190Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1791DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M

isc Silicon NPN Darlington Power Transistor 2SD1769DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for solenoid d

isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1739DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

isc Silicon NPN Power Transistor 2SD1713DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1158Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Darlington Power Transistor 2SD1785DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEComplement to Type 2SB1258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL