2SD17 - Даташиты. Аналоги. Основные параметры

2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta =

Ordering number EN2110B NPN Epitaxial Planar Silicon Transistor 2SD1799 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2045B [2SD1799] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

Ordering number 2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E E

Ordering number ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043B Features [2SB1168/2SD1725] 8.0 2.0 Low collector-to-emitter saturation voltage. 2.7 4.0 High fT. Excellent linearity of hFE. Short switching time. 1

Ordering number EN7200 2SD1710C SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SD1710C 500V / 7A Switching Regulator Applications Features High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25

Ordering number 2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E

Ordering number 2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time. B Base C Collector E

2SD1781K Datasheet Medium Power Transistor (32V, 800mA) lOutline l Parameter Value SMT3 VCEO 32V IC 800mA SOT-346 SC-59 lFeatures l 1)Very low VCE(sat). lInner circuit l VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lApplication l

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 0.5 0.1 0.55 0.1 Structure 2.3 0.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collec

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Units mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 4.0 high current, IC=0.7A. 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) (3) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emi

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 /

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features External dimensions (Units mm) 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3 +0.2 6.5 0.2 -0.1 C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 Structure 0.5 0.1 0.55 0.1 2.3 0.2 2

2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor (80V, 0.5A) 2SD1782K 2SD1782KFRA External dimensions (Unit mm) Features 1) Low VCE(sat). 2.9 0.2 VCE(sat) =0.2V(Typ.) 1.1+0.2 1.9 0.2 -0.1 (IC / IB=0.5 A / 50mA) 0.8 0.1 0.95 0.95 2) High VCEO,VCEO=80V (1) (2) 0 0.1 2SB1198KFRA 3) Complements the 2SB1198K. (3) +0.1 0.15-0.06 +0.1 0.4 -0.0

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units mm) Features 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5+0.2 1.6 0.1 -0.1 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181 0.4 0.1 0.5 0.

2SD1782K Datasheet Power Transistor (80V, 500mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 80V IC 500mA SMT3 lFeatures lInner circuit l l 1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA) 2)High breakdown voltage. BVCEO=80V 3)Complements the 2SB1198K lApplication l DRIVER lPackaging specifications l Basic

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Transistors Power Transistor (80V, 0.5A) 2SD1782K FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-222-D93) 271 Transistors 2SD1782K FElectrical characteristics (Ta = 25_

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

2SD1757K Transistors Power Transistor (15V, 0.5A) 2SD1757K External dimensions (Units mm) Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. 1.6 Absolute maximum ratings (Ta = 25 C) 2.8 Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V 0.3to0.6 Collector-emitter voltage VCEO 15 V Each lead has same dimensions Emitter-base voltage VEBO

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units mm) 1) Low VCE(sat). 2SD1758 2SD1862 VCE(sat) = 0.5V (Typ.) 2.5 0.2 2.3+0.2 6.8 0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1182 / 2SB1240 0.65 0.1 0.75 0.65Max. Structure 0.9 0.55 0.1 Epitaxial planar type NPN silicon transistor

2SD1781KFRA 2SD1781K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781KFRA External dimensions (Unit mm) Features 1) Very Low VCE(sat). 2.9 0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9 0.2 -0.1 IC / IB= 500 A / 50mA 0.8 0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0 0.1 3) Complements the 2SB1197K 2SB1197K. (3) +0

2SD1757K Datasheet Power Transistor (15V, 500mA) lOutline l Parameter Value SMT3 VCEO 15V IC 500mA SOT-346 SC-59 lFeatures l 1)Low VCE(sat). (Typ.8mV at IC/IB=10/1mA) lInner circuit l 2)Optimal for muting. lApplication l MUTING

2SD1759 / 2SD1861 Transistors Power transistor (40V, 2A) 2SD1759 / 2SD1861 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SD1759 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SB1183 / 2SB1239. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base (2) Collector EIAJ SC-

Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1156 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install

Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactory linearity 2.3 0.2 High emitter to base voltage VEBO 4.6 0.4 I type package enabling direct soldering

Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 2.3 0.2 I type package enabling direct soldering of

Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1175 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

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Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington Unit mm For midium speed power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1180 and 2SB1180A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the pr

Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1176 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

Power Transistors 2SD1753 Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 For power amplification with high forward current transfer ratio 1.1 0.1 0.85 0.1 Features 0.75 0.1 0.4 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 2.3 0.2 I type package enabling direct soldering of the radia

Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit mm For power switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Complementary to 2SB1154 Features 3.2 0.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC 2.0 0.2 2.0 0.1 Full-pack package which can be install

Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB1193 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Rat

Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For low-freauency power amplification 3.0 0.2 Complementary to 2SB1172 and 2SB1172A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package e

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Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification Unit mm For TV vertical deflection output 10.0 0.2 4.2 0.2 Complementary to 2SB1192 and 2SB1192A 5.5 0.2 2.7 0.2 Features 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolu

Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1179 and 2SB1179A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 High-speed switching 0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin to th

Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Unit mm 7.0 0.3 3.5 0.2 Complementary to 2SB1148 and 2SB1148A 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1

Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit mm 7.0 0.3 3.5 0.2 Complementary to 2SB1177 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1 Large collector current IC I type package enabling direct sol

Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Complementary to 2SB1170 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 2.3 0.2 I type package enabling direct solder

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Power Transistors 2SD1776, 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm Features High foward current transfer ratio hFE 10.0 0.2 4.2 0.2 Satisfactory linearity of foward current transfer ratio hFE 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0

Power Transistors 2SD1744 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1174 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder

Power Transistors 2SD1775, 2SD1775A Silicon NPN triple diffusion planar type Unit mm For high-speed switching and high current amplification ratio 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Features High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to the pr

Power Transistors 2SD1771, 2SD1771A Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A Features 1.5max. 1.1max. High collector to emitter VCEO 0.8 0.1 0.5max. Large collector power dissipation PC N type package enabling direct soldering of the

Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer Unit mm 8.5 0.2 3.4 0.3 ratio 6.0 0.2 1.0 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- 0 to 0.4 earity R = 0.5 0.8 0.1 R = 0.5 2.54 0.3 High emitter-base voltage (Collector open) VEBO 1.0 0.1 1.4

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Power Transistors 2SD1743, 2SD1743A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Complementary to 2SB1173 and 2SB1173A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package enabling direct

Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit mm For low-freauency power amplification 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1178 and 2SB1178A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the

UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte

2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat)

2SD1767 0.7A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES High Breakdown Voltage and Current 4 Excellent DC Current Gain Linearity Complementary to 2SB1189 1 2 3 B C A E CLASSIFICATION OF hFE E C Product-Rank 2SD1767-P 2SD1767-Q 2SD1767-R B D

2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free D-Pack (TO-252) FEATURES Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184 CLASSIFICATION OF hFE A Product-Rank 2SD1760-P 2SD1760-Q 2SD1760-R C B D Range 82 180 120 270 180 390

NPN TRIPLE DIFFUSED 2SD1711 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1189 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR (NPN) TO-252-2L FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 1. BASE Complements the 2SB1184. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1766 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) 2. COLLECTOR Complements to 2SB1188 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L 2SD1758 TRANSISTOR (NPN) 1.BASE 2.COLLECTOR FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 3.EMITTER 2 1 3 Equivalent Circuit D1758=Device code D 1 7 5 8 Solid dot=Green moldinn compound device, XXXX if none,the normal device XXXX=Code MAXIM

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SD1782 TRANSISTOR (NPN) FEATURES 1. BASE Low VCE(sat) 2. EMITTER High BVCEO 3. COLLECTOR Complements the 2SB1198 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1789 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1788 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-

Equivalent C circuit B Built-in Avalanche Diode for Surge Absorbing Darlington 2SD1796 (3k )(150 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Symbol 2SD1796 Unit Conditions 2SD1796 Unit

Equivalent C circuit B Darlington 2SD1769 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol Symbol 2SD1769 Unit Conditions 2SD1769 Unit 0.2 4.8 0.2 10.2 0.

Equivalent C circuit B Darlington 2SD1785 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD1785 Unit Symbol Conditions 2SD1785 Unit

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case ITO-220 (TP7L10) Unit mm 7A NPN RATINGS Absolute Maximum Ratings Conditions Item Symbol Ratings Unit Storage Temperature Tstg -55 +150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7 V Collector Current DC I

2SD1766 TRANSISTOR (NPN) FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 40 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2

2SD1757K TRANSISTOR (NPN) SOT-23 FEATURES Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temp

2SD1781K SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

2SD1761(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low collector saturation voltage Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation PC=30W(TC=25 ) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in

2SD1760(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5

2SD1766 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) MIN 0.53 Complements to 2SB1188 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

2SD1757K SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Optimal for muting. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collec

2SD1758(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC

FM120-M WILLAS THRU 2SD1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR c(NPN) ss design, excellent power dissipation offers Bat h proce b FEATURES etter reverse leakage current and thermal resistance. SOT-89 SOD-123H Low profile surfa

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage high speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage high speed switching. / Applications Use in horizontal deflection circuites of color TV. /

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem

SMD Type Transistors NPN Transistors 2SD1745 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 0.80+0.1 max -0.1 Complementary to 2SB1175 2.3 0.60+ 0.1 1 Base - 0.1 +0.15

SMD Type Transistors NPN Transistors 2SD1781 (2SD1781K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Very Low VCE(sat). High current capacity in compact package. Complimentary to 2SB1197(2SB1197K) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit C

SMD Type Transistors NPN Transistors 2SD1746 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 0.127 -0.1 Large collector current IC 0.80+0.1 max Complementary to 2SB1176 2.3 0.60+ 0.1 1 Base - 0.1 +0.15

SMD Type Transistors NPN Transistors 2SD1767 1.70 0.1 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 0.42 0.1 0.46 0.1 Complementary to 2SB1189 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SD1760 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE (sat) Complementary to 2SB1184 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

SMD Type Transistors NPN Transistors 2SD1702 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SD1742 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172 + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2 Co

SMD Type Transistors NPN Transistors 2SD1733 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.127 +0.1 0.80-0.1 max Complementary to 2SB1181 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame

SMD Type Transistors NPN Transistors 2SD1766 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V High-speed switching. 0.42 0.1 0.46 0.1 Complements to 2SB1188 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector

SMD Type Transistors NPN Transistors 2SD1758 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE (sat) Complementary to 2SB1182 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type Transistors NPN Transistors 2SD1742A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172A + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2

SMD Type Transistors NPN Transistors 2SD1782 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect

SMD Type Transistors NPN Transistors 2SD1784 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=30V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE

CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High satur

2SD1781 Plastic-Encapsulate Transistors SOT-23 (NPN) FEATURES Very low VCE(sat). VCE(sat)

2SD1766 NPN Transistors SMD Ty p e Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=32V 3 High-speed switching. 2 Complements to 2SB1188 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VC

2SD1766 Medium Power Transistor Features Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A). hFE Classification Absolute Maximum Ratings Ta = 25 *1. Pw=20ms. *2. 40X40X 0.7mm Ceramic board. Electrical Characteristics Ta = 25 REV.08 1 of 1

2SD1781K Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197K Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 4 2SD1781K ELECTRICAL CHARACTERISTICS @ Ta=25 unle

isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 8A CE(sat) C Complement to Type 2SB1156 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications

isc Silicon NPN Power Transistor 2SD1717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1789 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1731 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1761 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1187 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1711 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1710 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1712 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1715 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1160 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistor 2SD1718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1163 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 6A CE(sat) C Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications

isc Silicon NPN Darlington Power Transistor 2SD1773 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Complement to Type 2SB1193 Minimum Lot-to-Lot variations for robust device performance and reliable operation A

isc Silicon NPN Power Transistor 2SD1728 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1709 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1734 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1763A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SB1186A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1760 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Typ)@ I = 2A CE(sat) C Complements the 2SB1184 Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1727 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

isc Silicon NPN Darlington Power Transistor 2SD1756 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 170V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high current amplifier applications. ABSOL

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SB1186 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMU

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1772 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Complement to Type 2SB1192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Darlington Power Transistor 2SD1765 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @I = 1A CE(sat) C High DC Current Gain h = 1000(Min.) @ I = 1A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1764 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor Relay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1758 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Typ)@ I = 2A CE(sat) C Complement to Type 2SB1182 Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers A

isc Silicon NPN Power Transistor 2SD1762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min.) (BR)CEO Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1185 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1788 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1778 DESCRIPTION High Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output sta

isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 0.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications

isc Silicon NPN Power Transistor 2SD1716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1161 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION With TO-220Fa package Complement to type 2SB1192/1192A Large collector power dissipation APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emit

isc Silicon NPN Power Transistor 2SD1770 DESCRIPTION High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Complement to Type 2SB1190 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

isc Silicon NPN Darlington Power Transistor 2SD1769 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for solenoid d

isc Silicon NPN Power Transistor 2SD1729 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1739 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1713 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1158 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Darlington Power Transistor 2SD1785 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Complement to Type 2SB1258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL