Биполярный транзистор 2SD1702 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1702
Маркировка: TE_TF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: SOT89
2SD1702 Datasheet (PDF)
2sd1702.pdf
SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
2sd1707.pdf
Power Transistors2SD1707Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1156 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
2sd1705.pdf
Power Transistors2SD1705Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1154 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
2sd1707.pdf
isc Silicon NPN Power Transistor 2SD1707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 8ACE(sat) CComplement to Type 2SB1156Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
2sd1705.pdf
isc Silicon NPN Power Transistor 2SD1705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 6ACE(sat) CComplement to Type 2SB1154Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
2sd1709.pdf
isc Silicon NPN Power Transistor 2SD1709DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sd1706.pdf
isc Silicon NPN Power Transistor 2SD1706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB1155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050