2SD1710 - Даташиты. Аналоги. Основные параметры

Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base)

isc Silicon NPN Power Transistor 2SD1710 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

Ordering number EN7200 2SD1710C SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SD1710C 500V / 7A Switching Regulator Applications Features High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage high speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage high speed switching. / Applications Use in horizontal deflection circuites of color TV. /