Silicon Diffused Power Transistor2SD1710GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflectioncircuites of colour television receiversTO-3PMLQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)

isc Silicon NPN Power Transistor 2SD1710DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Ordering number : EN72002SD1710CSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon Transistor2SD1710C500V / 7A Switching Regulator ApplicationsFeatures High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting.SpecificationsAbsolute Maximum Ratings at Ta=25

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltagehigh speed switching. / Applications DC-DC Switching regulator applications, High voltage swit

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltagehigh speed switching. / Applications Use in horizontal deflection circuites of color TV. /