Биполярный транзистор 2SD1736 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1736
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: TO126
2SD1736 Datasheet (PDF)
2sd1736.pdf
isc Silicon NPN Power Transistor 2SD1736DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
2sd1733.pdf
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863TransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units : mm) Features1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.11.5+0.21.60.1 -0.13) Good hFE linearity4) Low VCE (sat)5) Complements the 2SB1260 / (1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB1181 0.40.1 0.50.
2sd1898 2sd1733 2sd1768s 2sd1863.pdf
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO
2sd1898 2sd1733.pdf
2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4
2sd1731.pdf
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2sd1732.pdf
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2sd1730.pdf
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2sd1739.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1733.pdf
SMD Type TransistorsNPN Transistors2SD1733TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.127+0.10.80-0.1max Complementary to 2SB1181+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parame
2sd1735.pdf
isc Silicon NPN Power Transistor 2SD1735DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
2sd1731.pdf
isc Silicon NPN Power Transistor 2SD1731DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1734.pdf
isc Silicon NPN Power Transistor 2SD1734DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
2sd1732.pdf
isc Silicon NPN Power Transistor 2SD1732DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1737.pdf
isc Silicon NPN Power Transistor 2SD1737DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
2sd1730.pdf
isc Silicon NPN Power Transistor 2SD1730DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1738.pdf
isc Silicon NPN Power Transistor 2SD1738DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
2sd1739.pdf
isc Silicon NPN Power Transistor 2SD1739DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050