2SD1736 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units mm) Features 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5+0.2 1.6 0.1 -0.1 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181 0.4 0.1 0.5 0.

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

SMD Type Transistors NPN Transistors 2SD1733 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.127 +0.1 0.80-0.1 max Complementary to 2SB1181 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame

isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1731 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1734 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

isc Silicon NPN Power Transistor 2SD1739 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co