2SD1736 Datasheet. Specs and Replacement
Type Designator: 2SD1736 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO126
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2SD1736 datasheet
..1. Size:218K inchange semiconductor
2sd1736.pdf 
isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
8.1. Size:80K rohm
2sd1733.pdf
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 External dimensions (Units mm) Features 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5+0.2 1.6 0.1 -0.1 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181 0.4 0.1 0.5 0.... See More ⇒
8.2. Size:114K rohm
2sd1898 2sd1733 2sd1768s 2sd1863.pdf
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO... See More ⇒
8.3. Size:458K rohm
2sd1898 2sd1733.pdf
2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4... See More ⇒
8.4. Size:105K panasonic
2sd1731.pdf
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8.5. Size:105K panasonic
2sd1732.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.6. Size:105K panasonic
2sd1730.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.7. Size:102K panasonic
2sd1739.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.8. Size:974K kexin
2sd1733.pdf
SMD Type Transistors NPN Transistors 2SD1733 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.127 +0.1 0.80-0.1 max Complementary to 2SB1181 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parame... See More ⇒
8.9. Size:209K inchange semiconductor
2sd1735.pdf
isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
8.10. Size:215K inchange semiconductor
2sd1731.pdf
isc Silicon NPN Power Transistor 2SD1731 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base ... See More ⇒
8.11. Size:212K inchange semiconductor
2sd1734.pdf
isc Silicon NPN Power Transistor 2SD1734 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
8.12. Size:215K inchange semiconductor
2sd1732.pdf
isc Silicon NPN Power Transistor 2SD1732 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base ... See More ⇒
8.13. Size:209K inchange semiconductor
2sd1737.pdf
isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
8.14. Size:215K inchange semiconductor
2sd1730.pdf
isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base ... See More ⇒
8.15. Size:210K inchange semiconductor
2sd1738.pdf
isc Silicon NPN Power Transistor 2SD1738 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
8.16. Size:209K inchange semiconductor
2sd1739.pdf
isc Silicon NPN Power Transistor 2SD1739 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co... See More ⇒
Detailed specifications: 2SD1729, 2SD173, 2SD1730, 2SD1731, 2SD1732, 2SD1733, 2SD1734, 2SD1735, BC549, 2SD1737, 2SD1738, 2SD1739, 2SD174, 2SD1740, 2SD1741, 2SD1742, 2SD1743
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