2SD18 - описание и поиск аналогов

Ordering number EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number EN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1204/2SD1804] Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] Features Low collector-to-emitter saturation voltage. Good linearity o

Ordering number EN2425 NPN Triple Diffused Planar Silicon Transistor 2SD1878 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1878] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2018A High DC current gain. [2SB1234/2SD1851] Very small-sized package permitting sets to be made smaller and slimer. C Collector B Base E Emitter ( )

Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle

Ordering number EN2353 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1854 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2006B Features [2SD1854] 6.0 4.7 High DC current gain. 5.0 Darlington connection. 0.5 0.6 0.5 0.5 1 Emitter 2 Collector 1 2 3 3 Base EIAJ SC-51 1.45 1.45 SANYO MP Sp

Ordering number EN2430 NPN Triple Diffused Planar Silicon Transistor 2SD1883 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1883] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2424 NPN Triple Diffused Planar Silicon Transistor 2SD1877 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1877] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2433 NPN Triple Diffused Planar Silicon Transistor 2SD1886 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1886] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2369A NPN Epitaxial Planar Silicon Transistor 2SD1817 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2045B Features [2SD1817] 6.5 High DC current gain. 2.3 5.0 0.5 4 Small and slim package permitting the 2SD1817- applied sets to be made more compact. 0.85 0.7 1.2 1 Base 0.6 0.5 2 Co

Ordering number EN2426A NPN Triple Diffused Planar Silicon Transistor 2SD1879 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1879] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions AF amplifier, solenoid drivers, LED drivers. unit mm Darlington connection. 2033 High DC current gain. [2SB1235/2SD1852] B Base C Collector E Emitter ( ) 2SB1235 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN3260A 2SB1231 PNP Epitaxial Planar Silicon Transistor 2SD1841 NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1231/2SD1841] Features Large current capacity and wi

Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle

Ordering number EN2429 NPN Triple Diffused Planar Silicon Transistor 2SD1882 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1882] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2211B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1225/2SD1827 Driver Applications Applications Package Dimensions Suitable for use in cotrol of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1225/2SD1827] Features High DC current gain. Large current capacity and wide ASO. Low

Ordering number EN2423 NPN Triple Diffused Planar Silicon Transistor 2SD1876 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1876] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SD1838] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity Wide ASO. On-chip Zener dio

Ordering number EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-votlage 2041A regulators. [2SB1227/2SD1829] Features High DC current gain. Large current capacity and wide ASO. L

Ordering number EN2428A NPN Triple Diffused Planar Silicon Transistor 2SD1881 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1881] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number EN3261A 2SB1232 PNP Epitaxial Planar Silicon Transistor 2SD1842 NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1232/2SD1842] Features Large current capacity and wi

Ordering number EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1228/2SD1830] Features High DC current gain. Large current capacity and wide ASO. Lo

Ordering number EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

Ordering number EN2432A NPN Triple Diffused Planar Silicon Transistor 2SD1885 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1885] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, and constant-voltage regulators. 2041A [2SB1223/2SD1825] Features High DC current gain. Large current capacity and wide ASO. Micaless package

Ordering number EN2434 NPN Triple Diffused Planar Silicon Transistor 2SD1887 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1887] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2116B NPN Epitaxial Planar Silicon Transistor 2SD1806 High-Current Switching Applications Applications Package Dimensions Relay control, motor control, switching. unit mm 2045B Features [2SD1806] 6.5 Low saturation voltage. 2.3 5.0 0.5 4 On-chip diode between collector and emitter. Small and slim package permitting 2SD1806-applied sets to be made

Ordering number ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2003B [2SB1229/2SD1835] 5.0 Features 4.0 4.0 Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Ordering number EN2111B NPN Epitaxial Planar Silicon Transistor 2SD1800 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2045B [2SD1800] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Large current capacity. Small and slim package making it easy to make 2SD1800-applied sets

Ordering number EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications Package Dimensions Strobes, voltage regulators, relay drivers, lamp unit mm drivers. 2045B [2SD1805] 6.5 Features 2.3 5.0 0.5 4 Low saturation voltage. Fast switching time. Large current capacity. Small and slim package making it easy to

Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number EN2210B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1224/2SD1826 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1224/2SD1826] Features High DC current gain. Large current capacity and wide ASO. M

Ordering number EN7201 2SD1886C SANYO Semiconductors DATA SHEET www.datasheet4u.com NPN Triple Diffused Planar Silicon Transistor 2SD1886C Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=

Ordering number EN2431 NPN Triple Diffused Planar Silicon Transistor 2SD1884 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1884] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number EN2506 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1853 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit mm 2003B Features [2SD1853] 5.0 High DC current gain. 4.0 4.0 Low saturation voltage. 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3

Ordering number EN3259 2SB1230 PNP Epitaxial Planar Silicon Transistor 2SD1840 NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters and other unit mm general high-current switching applications. 2022A [2SB1230/2SD1840] Features Large current capacity and wide

Ordering number EN2427A NPN Triple Diffused Planar Silicon Transistor 2SD1880 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD1880] 16.0 5.6 Features 3.4 3.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number EN2212B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1226/2SD1828 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2041A [2SB1226/2SD1828] Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mo

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC4132 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency. (fT = 80MHz) (2) 4) Complements the 2SB1236. (3) (1) Base(Gate) (2) Collector(Drain) RO

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 0.5 0.1 0.55 0.1 Structure 2.3 0.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collec

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)

2SD1897 Transistors Transistors 2SD1757K (96-768-D91) (94S-314-D95) 317

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SD1834 Datasheet Medium Power Transistor (60V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCES 60V IC 1A MPT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. (typically,DC current gain=15000 at VCE=3V,IC=0.5A) 2)High input impedance. lApplication l

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units mm) 1) Low VCE(sat). 2SD1758 2SD1862 VCE(sat) = 0.5V (Typ.) 2.5 0.2 2.3+0.2 6.8 0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1182 / 2SB1240 0.65 0.1 0.75 0.65Max. Structure 0.9 0.55 0.1 Epitaxial planar type NPN silicon transistor

2SD1898 Datasheet Middle Power Transistor (80V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=150mV at IC/IB=500mA/50mA. 2)Complementary PNP Types 2SB1260 lApplication l LOW FREQUENCY OUTPUT AMPLIFIER lPackaging specifications l Ba

Medium Power Transistor (32V, 1A) 2SD1858 Features Dimensions (Unit mm) 1) Low VCE(sat) = 0.15V(Typ.) + (lC / lB = 500mA / 50mA) 2.5 0.2 + - 6.8 0.2 - 2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor + 0.5 0.1 - (1) (2) (3) 2.54 2.54 + 1.05 0.45 0.1 - (1) Emitter (2) Collector (3) Base ROHM ATV Absolute maximum ratin

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

2SD1898 Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=50 A, IE=0 Collector-Base Breakdown Voltage 100 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=50 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=80V, IE=0 Collector Cutoff Current 1 A IEBO VEB=4V, IC=0 Emitter Cu

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

Ordering number EN2115C 2SD1805 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single TP/TP-FA Applications Strobes, voltage regulators, relay drivers, lamp drivers Features Low saturation voltage Fast switching time Large current capacity Small and slim package making it easy to make 2SD1805-applied sets smaller Specifications Absolute

2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th

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Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M

Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.

Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB1252 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1254 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing

Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M

Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing

Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1253 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1255 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1 TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1 * Excellent linerarity of hFE. TO-251 * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1 TO-252 ORDERING INFORMATIO

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S * High breakdown voltage.(BV =120V) CEO * Low collector output capacitance.(Typ.20pF at V =10V) CB * High transition frequency.(f =80MHz) T 1 1 TO-92 TO-92NL 1 1 TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SD1898G-x-AA3-R SOT-223 B C E Tape Reel 2SD1898G-x-AB3-R SOT-89 B C E Tape Reel 2SD1898G-x-AE3-R SOT-23

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1868 2SA1869 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). A L Complementary to 2SB1218A 3 3 Top View C B 1 1 2 2 APPLICATION K E General purpose amplification. D H

2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

NPN TRIPLE DIFFUSED 2SD1876 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) a Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L 2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note) Symbol Parameter Value Unit VCBO Collector-

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMB

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION With TO-3PFa package Optimum for 90W HiFi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ra

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM 2 W (Tamb=25 ) 2. COLLECTOR Collector current 3. EMITTER ICM 3 A 1 2 3 Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARA

2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

2SD1802(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 60 VCEO V Collector-Emitter Voltage 50 VEBO V Emitter-Base Voltage 6.0 Collector Current IC A 3.0 Collector Power Dissipation PD 1.0 W Junction Temperature Tj -55 to +

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Tempera

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER C (Ta=25 ) ABSOLUTE MAXIMUM RATINGS Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Tempera

WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for pack

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications , ,

SMD Type Transistors NPN Transistors 2SD1802 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO 0.127 +0.1 0.80-0.1 max Complementary to 2SB1202 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter

SMD Type Transistors NPN Transistors 2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO

SMD Type Transistors NPN Transistors 2SD1804 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1204 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

SMD Type Transistors NPN Transistors 2SD1816 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127 +0.1 0.80-0.1 max Complementary to 2SB1216 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratin

SMD Type Transistors NPN Transistors 2SD1851 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=50V C +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SB1234 +0.1 1.9 -0.1 B 1.Base 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col

SMD Type Transistors NPN Transistors 2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

SMD Type Transistors NPN Transistors 2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB1220 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type Transistors NPN Transistors 2SD1834 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A C Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

SMD Type Transistors NPN Transistors 2SD1801 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed. 0.127 Complementary to 2SB1201 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

SMD Type Transistors NPN Transistors 2SD1805 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 0.80-0.1 Large current capacity max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Par

SMD Type Transistors NPN Transistors 2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

SMD Type Transistors NPN Transistors 2SD1803 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1203 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

SMD Type Transistors NPN Transistors 2SD1815 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High fT. 0.80-0.1 max Complementary to 2SB1215 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Rati

2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1

2SD1898 NPN-General use transistor 1W 1.0A 32V 4 Applications Can be used for switching and amplifying in Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments electrical and electronic equipments SOT-89 SOT 1 Base 2 Collector 3 Collector 3 Emitter Absolute Maximum Ratings (Ta = 25 ) parameters symbol rating unit

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1802 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon NPN Power Transistor 2SD1833 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 4A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1856 DESCRIPTION High DC Current Gain h = 2000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 2A CE(sat) C Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor Relay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1846 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION High Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1300 V CBO V Co

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804 DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching appl

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1891 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 3.0V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1251 Minimum Lot-to-Lot variations for robust device performance and reliable operati

isc Silicon NPN Darlington Power Transistor 2SD1889 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1816 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage High f T Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,H

isc Silicon NPN Power Transistor 2SD1878 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1857 DESCRIPTION High breakdown voltage. (BV = 120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SB1236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifier

isc Silicon NPN Power Transistor 2SD1848 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1883 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1877 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Speed Switching High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operati

isc Silicon NPN Power Transistor 2SD1886 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other general

isc Silicon NPN Power Transistor 2SD1879 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 4A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SB1252 Minimum Lot-to-Lot variations for robust device performance and reliable operat

isc Silicon NPN Power Transistor 2SD1832 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, relay drivers, converters and other general high-current

isc Silicon NPN Power Transistor 2SD1882 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1827 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1225 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an

isc Silicon NPN Power Transistor 2SD1876 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Speed Switching High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1897 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1829 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1227 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,

isc Silicon NPN Power Transistor 2SD1881 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1885C DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD1830 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1228 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an

isc Silicon NPN Darlington Power Transistor 2SD1894 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 6A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 6A CE(sat) C Complement to Type 2SB1254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistors 2SD188 DESCRIPTION With TO-3 package Large current capability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emi

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1801 DESCRIPTION Large current capacitance and wide ASO Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon NPN Power Transistor 2SD1885 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1825 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1223 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-vol

isc Silicon NPN Power Transistor 2SD1887 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1888 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1339 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1805 DESCRIPTION High current capacity Small and slim package making it easy to make 2SD1805-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobes,voltage regu

isc Silicon NPN Power Transistors 2SD180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier and low speed switching Suitable for

isc Silicon NPN Power Transistor 2SD1899 DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V

isc Silicon NPN Power Transistor 2SD1804L-T DESCRIPTION Excellent linearity of h FE Low Collector-Emitter Breakdown Voltage- V = 50 V (BR)CEO Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MA

isc Silicon NPN Darlington Power Transistor 2SD1826 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 3.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1224 APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1804-T DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current s

isc Silicon NPN Power Transistor 2SD1886C DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1884 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1849 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1840 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general high-current switching appl

isc Silicon NPN Power Transistor 2SD1880 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD1896 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Power Transistor 2SD1803 DESCRIPTION High Collector Current-I = 5.0A C Low Saturation Voltage - V = 0.4V(Max)@ I = 3.0A, I = 0.15A CE(sat) C B Good Linearity of h FE Complement to Type 2SB1203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high-speed inverters,converters, and other general

isc Silicon NPN Darlington Power Transistor 2SD1895 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1855 DESCRIPTION High Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1828 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1226 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in motor drivers, printer hammer drivers, r

isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1899-Z DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1815 DESCRIPTION Excellent linearity of h FE Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller Low collector-to-emitter saturation voltage High f T Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT