2SD18 Datasheet and Replacement

Ordering number:EN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]Features Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low collector-to-emitter satura

Ordering number:EN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]Features Low collector-to-emitter saturation voltage. Good linearity o

Ordering number:EN2425NPN Triple Diffused Planar Silicon Transistor2SD1878Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1878]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2553APNP/NPN Epitaxial Planar Silicon Transistors2SB1234/2SD1851Driver ApplicationsFeatures Package Dimensions AF amplifier, solenoid drivers, LED drivers.unit:mm Darlington connection.2018A High DC current gain.[2SB1234/2SD1851] Very small-sized package permitting sets to be madesmaller and slimer.C : CollectorB : BaseE : Emitter( )

Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle

Ordering number:EN2353NPN Epitaxial Planar Silicon Darlington Transistor2SD1854Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2006BFeatures [2SD1854]6.04.7 High DC current gain. 5.0 Darlington connection.0.50.60.5 0.51 : Emitter2 : Collector1 2 33 : BaseEIAJ : SC-511.45 1.45SANYO : MPSp

Ordering number:EN2430NPN Triple Diffused Planar Silicon Transistor2SD1883Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1883]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2424NPN Triple Diffused Planar Silicon Transistor2SD1877Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1877]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2433NPN Triple Diffused Planar Silicon Transistor2SD1886Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1886]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2369ANPN Epitaxial Planar Silicon Transistor2SD1817Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2045BFeatures [2SD1817]6.5 High DC current gain. 2.35.00.54 Small and slim package permitting the 2SD1817-applied sets to be made more compact.0.850.71.21 : Base0.60.52 : Co

Ordering number:EN2426ANPN Triple Diffused Planar Silicon Transistor2SD1879Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1879]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number:EN2554APNP/NPN Epitaxial Planar Silicon Transistors2SB1235/2SD1852Driver ApplicationsFeatures Package Dimensions AF amplifier, solenoid drivers, LED drivers.unit:mm Darlington connection.2033 High DC current gain.[2SB1235/2SD1852]B : BaseC : CollectorE : Emitter( ) : 2SB1235SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN3260A2SB1231 : PNP Epitaxial Planar Silicon Transistor2SD1841 : NPN Triple Diffused Planar Silicon Transistor2SB1231/2SD1841100V/25A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1231/2SD1841]Features Large current capacity and wi

Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle

Ordering number:EN2429NPN Triple Diffused Planar Silicon Transistor2SD1882Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1882]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2211BPNP/NPN Epitaxial Planar Silicon Darlington Transistor2SB1225/2SD1827Driver ApplicationsApplications Package Dimensions Suitable for use in cotrol of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1225/2SD1827]Features High DC current gain. Large current capacity and wide ASO. Low

Ordering number:EN2423NPN Triple Diffused Planar Silicon Transistor2SD1876Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1876]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2230BNPN Triple Diffused Planar Silicon Darlington Transistor2SD1838Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SD1838]4.510.0Features2.83.2 High DC current gain. Large current capacity Wide ASO. On-chip Zener dio

Ordering number:EN2213BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1227/2SD1829Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-votlage2041Aregulators.[2SB1227/2SD1829]Features High DC current gain. Large current capacity and wide ASO. L

Ordering number:EN2428ANPN Triple Diffused Planar Silicon Transistor2SD1881Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1881]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number:EN3261A2SB1232 : PNP Epitaxial Planar Silicon Transistor2SD1842 : NPN Triple Diffused Planar Silicon Transistor2SB1232/2SD1842100V/40A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters, and otherunit:mmgeneral high-current switching applications.2022A[2SB1232/2SD1842]Features Large current capacity and wi

Ordering number:EN2214BPNP/NPN Epitaxial Planar Silicon Darlington Transistor2SB1228/2SD1830Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1228/2SD1830]Features High DC current gain. Large current capacity and wide ASO. Lo

Ordering number:EN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Low collector-to-emitter saturat

Ordering number:EN2432ANPN Triple Diffused Planar Silicon Transistor2SD1885Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1885]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number:EN2209CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1223/2SD1825Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, and constant-voltage regulators.2041A[2SB1223/2SD1825]Features High DC current gain. Large current capacity and wide ASO. Micaless package

Ordering number:EN2434NPN Triple Diffused Planar Silicon Transistor2SD1887Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1887]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2116BNPN Epitaxial Planar Silicon Transistor2SD1806High-Current Switching ApplicationsApplications Package Dimensions Relay control, motor control, switching. unit:mm2045BFeatures [2SD1806]6.5 Low saturation voltage. 2.35.00.54 On-chip diode between collector and emitter. Small and slim package permitting 2SD1806-appliedsets to be made

Ordering number:ENN2158APNP/NPN Epitaxial Planar Silicon Transistor2SB1229/2SD1835Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2003B[2SB1229/2SD1835]5.0Features4.04.0 Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Ordering number:EN2111BNPN Epitaxial Planar Silicon Transistor2SD1800Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2045B[2SD1800]6.5Features2.35.00.54 High DC current gain (hFE 4000). Large current capacity. Small and slim package making it easy to make2SD1800-applied sets

Ordering number:EN2115BNPN Epitaxial Planar Silicon Transistor2SD1805High-Current Switching ApplicationsApplications Package Dimensions Strobes, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SD1805]6.5Features2.35.00.54 Low saturation voltage. Fast switching time. Large current capacity. Small and slim package making it easy to

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number:EN2210BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1224/2SD1826Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1224/2SD1826]Features High DC current gain. Large current capacity and wide ASO. M

Ordering number : EN72012SD1886CSANYO SemiconductorsDATA SHEETwww.datasheet4u.comNPN Triple Diffused Planar Silicon Transistor2SD1886CColor TV Horizontal DeflectionOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=

Ordering number:EN2431NPN Triple Diffused Planar Silicon Transistor2SD1884Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1884]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High r

Ordering number:EN2506NPN Epitaxial Planar Silicon Darlington Transistor2SD1853Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2003BFeatures [2SD1853]5.0 High DC current gain.4.04.0 Low saturation voltage.0.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3JEDEC : TO-92EIAJ : SC-431.3

Ordering number:EN32592SB1230 : PNP Epitaxial Planar Silicon Transistor2SD1840 : NPN Triple Diffused Planar Silicon Transistor2SB1230/2SD1840100V/4A Switching ApplicationsApplications Package Dimensions Motor drivers, relay drivers, converters and otherunit:mmgeneral high-current switching applications.2022A[2SB1230/2SD1840]Features Large current capacity and wide

Ordering number:EN2427ANPN Triple Diffused Planar Silicon Transistor2SD1880Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD1880]16.05.6Features3.43.1 High speed (tf=100ns). High breakdown voltage (VCBO=1500V). High

Ordering number:EN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]Features Low collector-to-emitter saturation voltage. High current and high fT.

Ordering number:EN2212BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1226/2SD1828Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2041A[2SB1226/2SD1828]Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.

Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag

Ordering number:EN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE.

DATA SHEETDARLINGTON POWER TRANSISTOR2SD1843NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm)dumper diode in collector to emitter and zener diode in collector tobase. This transistor is ideal for use in acuator drives such asmo

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1)3) High transition frequency. (fT = 80MHz) (2)4) Complements the 2SB1236. (3)(1) Base(Gate)(2) Collector(Drain)RO

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 External dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767high current, IC=0.7A. 4.01.0 2.5 0.52) Complements the 2SB1189 / 2SB1238. (1)(2) Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VCollec

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SD1897TransistorsTransistors2SD1757K(96-768-D91)(94S-314-D95)317

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SD1834DatasheetMedium Power Transistor (60V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCES60VIC1AMPT3 lFeatures lInner circuitl l1)Darlington connection for high DC current gain.(typically,DC current gain=15000 atVCE=3V,IC=0.5A)2)High input impedance.lApplicationl

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor

2SD1898DatasheetMiddle Power Transistor (80V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=150mV at IC/IB=500mA/50mA.2)Complementary PNP Types : 2SB1260lApplicationlLOW FREQUENCY OUTPUT AMPLIFIERlPackaging specificationslBa

Medium Power Transistor (32V, 1A) 2SD1858 Features Dimensions (Unit : mm) 1) Low VCE(sat) = 0.15V(Typ.) +(lC / lB = 500mA / 50mA) 2.5 0.2+ -6.8 0.2-2) Compliments 2SB1237 Structure Epitaxial planar type NPN silicon transistor +0.5 0.1-(1) (2) (3)2.54 2.54+1.05 0.45 0.1-(1) Emitter(2) Collector (3) BaseROHM : ATVAbsolute maximum ratin

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

2SD1898Electrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=50A, IE=0Collector-Base Breakdown Voltage 100 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 80 VV(BR)EBO IE=50A, IC=0Emitter-Base Breakdown Voltage 5 VICBO VCB=80V, IE=0Collector Cutoff Current 1 AIEBO VEB=4V, IC=0Emitter Cu

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

Ordering number : EN2115C2SD1805Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single TP/TP-FAApplications Strobes, voltage regulators, relay drivers, lamp driversFeatures Low saturation voltage Fast switching time Large current capacity Small and slim package making it easy to make 2SD1805-applied sets smallerSpecificationsAbsolute

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

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Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

Power Transistors2SD1892Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB12525.5 0.2 2.7 0.2Features 3.1 0.1Optimum for 35W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

Power Transistors2SD1894Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125415.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 60W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

Power Transistors2SD1893Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD1895Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125515.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 90W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1TO-220 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT 1* Excellent linerarity of hFE. TO-251* Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1TO-252 ORDERING INFORMATIO

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S* High breakdown voltage.(BV =120V) CEO* Low collector output capacitance.(Typ.20pF at V =10V) CB* High transition frequency.(f =80MHz) T11TO-92 TO-92NL11TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SD1898G-x-AA3-R SOT-223 B C E Tape Reel2SD1898G-x-AB3-R SOT-89 B C E Tape Reel2SD1898G-x-AE3-R SOT-23

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

2SD1868, 2SD1869Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD1868, 2SD1869Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1868 2SA1869 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). AL Complementary to 2SB1218A 33 Top View C B11 22APPLICATION K E General purpose amplification. DH

2SD1898NPN Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductDescriptionSOT-89The 2SD1898 is designed for switching applications.Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

NPN TRIPLE DIFFUSED2SD1876 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)aCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252 -2L2SD1802 TRANSISTOR (NPN) FEATURES 1.BASE Adoption of FBET,MBIT Processes 2.COLLECTOR Large Current Capacity and Wide ASO Low Collector-to-Emitter Saturation Voltage 3.EMITTER Fast Switching Speed MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note)Symbol Parameter Value UnitVCBO Collector-

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMB

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION With TO-3PFa package Optimum for 90W HiFi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ra

Transys ElectronicsL I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25) 2. COLLECTOR Collector current 3. EMITTER ICM: 3 A 1 2 3 Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARA

2SD1898 TRANSISTOR (NPN)SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

2SD1802(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage 60 V VCEO Collector-Emi

2SD1899 Transistor(NPN)1.BASE TO-252-2L2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

2SD1899-Z(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

2SD1802NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1D-PAK(TO-252)ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage60VCEOVCollector-Emitter Voltage 50VEBOVEmitter-Base Voltage 6.0Collector CurrentICA3.0Collector Power Dissipation PD 1.0 WJunction TemperatureTj-55 to +

2SD1899NPN PLASTIC ENCAPSULATE TRANSISTORSP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1MAXIMUM RATINGS (TA=25 unless otherwise noted)D-PAK(TO-252)SymbolParameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 60VVEmitter-Base Voltage VEBO7Collector Current -Continuous IC 3 ACollector Power Dissipation PC 1 WJunction Tempera

2SD1898Epitaxial Planar NPN TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTERC(Ta=25 )ABSOLUTE MAXIMUM RATINGSRating SymbolLimits UnitVdcCollector-Base VoltageV 100CBOVdcCollector-Emitter Voltage 80VCEOVdcEmitter-Base Voltage 5VEBOIC A(DC)1Collector CurrentICP 2 A (Pulse)*PC 0.5 WCollector Power DissipationT , TstgCJunction Tempera

WILLAS2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value UnitRoHS product for pack

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f TLow VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,,

2SD1857D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,

SMD Type TransistorsNPN Transistors2SD1802TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low Collector-to-Emitter Saturation Voltage Fast Switching Speed Large Current Capacity and Wide ASO0.127+0.10.80-0.1max Complementary to 2SB1202+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter

SMD Type TransistorsNPN Transistors2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD1804TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1204+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol

SMD Type TransistorsNPN Transistors2SD1816TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127+0.10.80-0.1max Complementary to 2SB1216+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

SMD Type TransistorsNPN Transistors2SD1851SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=50VC+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SB1234 +0.11.9 -0.1B1.Base2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col

SMD Type TransistorsNPN Transistors2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB12191 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

SMD Type TransistorsNPN Transistors2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB12201 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type TransistorsNPN Transistors2SD1834SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1AC Collector Emitter Voltage VCEO=60V0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

SMD Type TransistorsNPN Transistors2SD1801TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 -0.7-0.2 +0.8 Features Low collector-to-emitter saturation voltage. Fast switching speed.0.127 Complementary to 2SB12010.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Pa

SMD Type TransistorsNPN Transistors2SD1805TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.10.80-0.1 Large current capacity max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Par

SMD Type TransistorsNPN Transistors2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

SMD Type TransistorsNPN Transistors2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SD1803TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1203+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol

SMD Type TransistorsNPN Transistors2SD1815TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High fT.0.80-0.1max Complementary to 2SB1215+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Rati

2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 120Collector - Emitter Voltage VCEO 80 VEmitter - Base Voltage VEBO 5Collector Current - Continuous IC 1

2SD1898NPN-General use transistor 1W 1.0A32V 4Applications Can be used for switching and amplifying inCan be used for switching and amplifying in 1 2 3various electrical and electronic equipmentselectrical and electronic equipments SOT-89 SOT1Base 2Collector 3Collector 3Emitter Absolute Maximum Ratings (Ta = 25) parameters symbol rating unit

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1802DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make2SD1802/ 2SB1202-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon NPN Power Transistor 2SD1833DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 4ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1856DESCRIPTIONHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 2ACE(sat) CBullt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned forr MotorRelay and Solenoid driver ap

isc Silicon NPN Power Transistor 2SD1846DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1850DESCRIPTIONHigh VoltageHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1300 VCBOV Co

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804DESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching appl

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1891DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 90V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 3.0V(Max.)@ I = 3ACE(sat) CComplement to Type 2SB1251Minimum Lot-to-Lot variations for robust deviceperformance and reliable operati

isc Silicon NPN Darlington Power Transistor 2SD1889DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1816DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,H

isc Silicon NPN Power Transistor 2SD1878DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1857DESCRIPTIONHigh breakdown voltage. (BV = 120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SB1236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifier

isc Silicon NPN Power Transistor 2SD1848DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1883DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1877DESCRIPTIONHigh Breakdown Voltage-V = 1300V (Min)CBOHigh Speed SwitchingHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1890DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 2AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operati

isc Silicon NPN Power Transistor 2SD1886DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc NPN Epitaxial Planar Silicon Transistor 2SD1817DESCRIPTIONHigh DC current gainCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral

isc Silicon NPN Power Transistor 2SD1879DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistors 2SD1899-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SB1261-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1892DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 4AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SB1252Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

isc Silicon NPN Power Transistor 2SD1832DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SD1841DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1231Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, relay drivers, converters andother general high-current

isc Silicon NPN Power Transistor 2SD1882DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1827DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1225Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,an

isc Silicon NPN Power Transistor 2SD1876DESCRIPTIONHigh Breakdown Voltage-V = 1300V (Min)CBOHigh Speed SwitchingHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1897DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1829DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 2.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1227Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,

isc Silicon NPN Power Transistor 2SD1881DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1885CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD1830DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 4A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1228Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,an

isc Silicon NPN Darlington Power Transistor 2SD1894DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 6AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 6ACE(sat) CComplement to Type 2SB1254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistors 2SD188DESCRIPTIONWith TO-3 packageLarge current capabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emi

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1801DESCRIPTIONLarge current capacitance and wide ASOSmall and slim package making it easy to make 2SD1801/2SB1201-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon NPN Power Transistor 2SD1885DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1825DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1223Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-vol

isc Silicon NPN Power Transistor 2SD1887DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Darlington Power Transistor 2SD1888DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1339Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1805DESCRIPTIONHigh current capacitySmall and slim package making it easy to make 2SD1805-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobes,voltage regu

isc Silicon NPN Power Transistors 2SD180DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable for

isc Silicon NPN Power Transistor 2SD1899DESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V

isc Silicon NPN Power Transistor 2SD1804L-TDESCRIPTIONExcellent linearity of hFELow Collector-Emitter Breakdown Voltage-: V = 50 V(BR)CEOFast switching timeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current switching applicationsABSOLUTE MA

isc Silicon NPN Darlington Power Transistor 2SD1826DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 3.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1224APPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,and constant-voltageregulators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1804-TDESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SB1204Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high current s

isc Silicon NPN Power Transistor 2SD1886CDESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SD1845DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1884DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon NPN Power Transistor 2SD1849DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Darlington Power Transistor 2SD1893DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1840DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB1230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalhigh-current switching appl

isc Silicon NPN Power Transistor 2SD1880DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SD1896DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 3ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 2SD1803DESCRIPTIONHigh Collector Current-I = 5.0ACLow Saturation Voltage -: V = 0.4V(Max)@ I = 3.0A, I = 0.15ACE(sat) C BGood Linearity of hFEComplement to Type 2SB1203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high-speed inverters,converters,and other general

isc Silicon NPN Darlington Power Transistor 2SD1895DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 7AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 7ACE(sat) CComplement to Type 2SB1255Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1855DESCRIPTIONHigh Collector Current:: I = 4ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1828DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 1.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1226Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in motor drivers, printer hammer drivers,r

isc Silicon NPN Power Transistor 2SD1847DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1899-ZDESCRIPTIONLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh transition frequency applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1815DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SD1815/2SB1215-used set smallerLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT