2SD1803R - Даташиты. Аналоги. Основные параметры

Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features Low collector-to-emitter saturation voltage. High current and high fT.

UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin

SMD Type Transistors NPN Transistors 2SD1803 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed 0.127 +0.1 High Current And High fT. 0.80-0.1 max Complementary to 2SB1203 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

isc Silicon NPN Power Transistor 2SD1803 DESCRIPTION High Collector Current-I = 5.0A C Low Saturation Voltage - V = 0.4V(Max)@ I = 3.0A, I = 0.15A CE(sat) C B Good Linearity of h FE Complement to Type 2SB1203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high-speed inverters,converters, and other general