2SD1803R
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1803R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 180
MHz
Collector Capacitance (Cc): 40
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO251
2SD1803R
Transistor Equivalent Substitute - Cross-Reference Search
2SD1803R
Datasheet (PDF)
7.1. Size:111K sanyo
2sb1203 2sd1803.pdf 
Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c
7.2. Size:168K sanyo
2sd1803.pdf
Ordering number:EN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]Features Low collector-to-emitter saturation voltage. High current and high fT.
7.3. Size:392K onsemi
2sb1203 2sd1803.pdf
Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE
7.4. Size:261K utc
2sd1803.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switchin
7.5. Size:1008K kexin
2sd1803.pdf
SMD Type TransistorsNPN Transistors2SD1803TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High Current And High fT. 0.80-0.1max Complementary to 2SB1203+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol
7.6. Size:215K inchange semiconductor
2sd1803.pdf
isc Silicon NPN Power Transistor 2SD1803DESCRIPTIONHigh Collector Current-I = 5.0ACLow Saturation Voltage -: V = 0.4V(Max)@ I = 3.0A, I = 0.15ACE(sat) C BGood Linearity of hFEComplement to Type 2SB1203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high-speed inverters,converters,and other general
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