2SD1822 - Даташиты. Аналоги. Основные параметры

Ordering number EN2211B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1225/2SD1827 Driver Applications Applications Package Dimensions Suitable for use in cotrol of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1225/2SD1827] Features High DC current gain. Large current capacity and wide ASO. Low

Ordering number EN2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1227/2SD1829 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-votlage 2041A regulators. [2SB1227/2SD1829] Features High DC current gain. Large current capacity and wide ASO. L

Ordering number EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, and constant-voltage regulators. 2041A [2SB1223/2SD1825] Features High DC current gain. Large current capacity and wide ASO. Micaless package

Ordering number EN2210B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1224/2SD1826 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1224/2SD1826] Features High DC current gain. Large current capacity and wide ASO. M

Ordering number EN2212B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1226/2SD1828 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2041A [2SB1226/2SD1828] Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.

Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th

Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M

Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.

Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification Features 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing.

Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing

Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1219 and 2SB1219A 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute M

Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Features 2.1 0.1 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. Low noise voltage NV. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion th

Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing

SMD Type Transistors NPN Transistors 2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

SMD Type Transistors NPN Transistors 2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB1220 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type Transistors NPN Transistors 2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5 A

isc Silicon NPN Darlington Power Transistor 2SD1827 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1225 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an

isc Silicon NPN Darlington Power Transistor 2SD1829 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1227 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,

isc Silicon NPN Darlington Power Transistor 2SD1825 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1223 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-vol

isc Silicon NPN Darlington Power Transistor 2SD1826 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 3.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1224 APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1828 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1226 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in motor drivers, printer hammer drivers, r