All Transistors. 2SD1822 Datasheet

 

2SD1822 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1822
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23

 2SD1822 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1822 Datasheet (PDF)

 8.1. Size:135K  sanyo
2sd1827.pdf

2SD1822
2SD1822

Ordering number:EN2211BPNP/NPN Epitaxial Planar Silicon Darlington Transistor2SB1225/2SD1827Driver ApplicationsApplications Package Dimensions Suitable for use in cotrol of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1225/2SD1827]Features High DC current gain. Large current capacity and wide ASO. Low

 8.2. Size:153K  sanyo
2sd1829.pdf

2SD1822
2SD1822

Ordering number:EN2213BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1227/2SD1829Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-votlage2041Aregulators.[2SB1227/2SD1829]Features High DC current gain. Large current capacity and wide ASO. L

 8.3. Size:149K  sanyo
2sd1825.pdf

2SD1822
2SD1822

Ordering number:EN2209CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1223/2SD1825Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, and constant-voltage regulators.2041A[2SB1223/2SD1825]Features High DC current gain. Large current capacity and wide ASO. Micaless package

 8.4. Size:152K  sanyo
2sd1826.pdf

2SD1822
2SD1822

Ordering number:EN2210BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1224/2SD1826Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1224/2SD1826]Features High DC current gain. Large current capacity and wide ASO. M

 8.5. Size:142K  sanyo
2sd1828.pdf

2SD1822
2SD1822

Ordering number:EN2212BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1226/2SD1828Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2041A[2SB1226/2SD1828]Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.

 8.6. Size:40K  panasonic
2sd1823 e.pdf

2SD1822
2SD1822

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

 8.7. Size:39K  panasonic
2sd1820.pdf

2SD1822
2SD1822

Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

 8.8. Size:40K  panasonic
2sd1821 e.pdf

2SD1822
2SD1822

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

 8.9. Size:37K  panasonic
2sd1821.pdf

2SD1822
2SD1822

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

 8.10. Size:38K  panasonic
2sd1824.pdf

2SD1822
2SD1822

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

 8.11. Size:43K  panasonic
2sd1820 e.pdf

2SD1822
2SD1822

Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

 8.12. Size:36K  panasonic
2sd1823.pdf

2SD1822
2SD1822

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

 8.13. Size:42K  panasonic
2sd1824 e.pdf

2SD1822
2SD1822

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

 8.14. Size:960K  kexin
2sd1820.pdf

2SD1822
2SD1822

SMD Type TransistorsNPN Transistors2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB12191 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

 8.15. Size:894K  kexin
2sd1821.pdf

2SD1822
2SD1822

SMD Type TransistorsNPN Transistors2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB12201 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur

 8.16. Size:962K  kexin
2sd1820a.pdf

2SD1822
2SD1822

SMD Type TransistorsNPN Transistors2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

 8.17. Size:210K  inchange semiconductor
2sd1827.pdf

2SD1822
2SD1822

isc Silicon NPN Darlington Power Transistor 2SD1827DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1225Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,an

 8.18. Size:210K  inchange semiconductor
2sd1829.pdf

2SD1822
2SD1822

isc Silicon NPN Darlington Power Transistor 2SD1829DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 2.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1227Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,

 8.19. Size:209K  inchange semiconductor
2sd1825.pdf

2SD1822
2SD1822

isc Silicon NPN Darlington Power Transistor 2SD1825DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1223Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-vol

 8.20. Size:210K  inchange semiconductor
2sd1826.pdf

2SD1822
2SD1822

isc Silicon NPN Darlington Power Transistor 2SD1826DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 3.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1224APPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,and constant-voltageregulators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.21. Size:185K  inchange semiconductor
2sd1828.pdf

2SD1822
2SD1822

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1828DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 1.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1226Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in motor drivers, printer hammer drivers,r

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BCX70H

 

 
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