2SD1830 - описание и поиск аналогов

Ordering number EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1228/2SD1830] Features High DC current gain. Large current capacity and wide ASO. Lo

isc Silicon NPN Darlington Power Transistor 2SD1830 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1228 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an

Ordering number EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SD1838] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity Wide ASO. On-chip Zener dio

Ordering number ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2003B [2SB1229/2SD1835] 5.0 Features 4.0 4.0 Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2SD1834 Datasheet Medium Power Transistor (60V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCES 60V IC 1A MPT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. (typically,DC current gain=15000 at VCE=3V,IC=0.5A) 2)High input impedance. lApplication l

SMD Type Transistors NPN Transistors 2SD1834 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A C Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

isc Silicon NPN Power Transistor 2SD1833 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 4A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SD1832 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S