2SD1830 Datasheet and Replacement

Ordering number:EN2214BPNP/NPN Epitaxial Planar Silicon Darlington Transistor2SB1228/2SD1830Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1228/2SD1830]Features High DC current gain. Large current capacity and wide ASO. Lo

isc Silicon NPN Darlington Power Transistor 2SD1830DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 4A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1228Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,an

Ordering number:EN2230BNPN Triple Diffused Planar Silicon Darlington Transistor2SD1838Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SD1838]4.510.0Features2.83.2 High DC current gain. Large current capacity Wide ASO. On-chip Zener dio

Ordering number:ENN2158APNP/NPN Epitaxial Planar Silicon Transistor2SB1229/2SD1835Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2003B[2SB1229/2SD1835]5.0Features4.04.0 Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2SD1834DatasheetMedium Power Transistor (60V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCES60VIC1AMPT3 lFeatures lInner circuitl l1)Darlington connection for high DC current gain.(typically,DC current gain=15000 atVCE=3V,IC=0.5A)2)High input impedance.lApplicationl

SMD Type TransistorsNPN Transistors2SD1834SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1AC Collector Emitter Voltage VCEO=60V0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

isc Silicon NPN Power Transistor 2SD1833DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 4ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SD1832DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS