2SD1923 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1923 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1922 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collector peak current ic (peak)

isc Silicon NPN Darlington Power Transistor 2SD1928 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 4A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE