Биполярный транзистор 2SD1952 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1952
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SOT89
2SD1952 Datasheet (PDF)
2sd1953.pdf
Ordering number:EN2507NPN Epitaxial Planar Silicon Transistor2SD1953120V/1.5A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2009AFeatures [2SD1953]8.02.7 Darlington connection.4.0 High DC current gain. Low dependence of DC current gain on temperature.3.01.60.80.80.60.51 : Emitte
2sd1958.pdf
Ordering number:EN2549ANPN Triple Diffused Planar Silicon Transistor2SD1958TV Horizontal Deflection OutputHigh-Current Switching ApplicationsFeatures Package Dimensions Excellent tf permitting efficient drive with lessunit:mminternal dissipation.2041A[2SD1958]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55
2sd1950.pdf
SMD Type TransistorsNPN Transistors2SD1950SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sd1959.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1959DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 650V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd1958.pdf
isc Silicon NPN Power Transistor 2SD1958DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output high-currentswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050