2SD1952 Datasheet and Replacement
Type Designator: 2SD1952
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT89
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2SD1952 Datasheet (PDF)
2sd1953.pdf

Ordering number:EN2507NPN Epitaxial Planar Silicon Transistor2SD1953120V/1.5A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2009AFeatures [2SD1953]8.02.7 Darlington connection.4.0 High DC current gain. Low dependence of DC current gain on temperature.3.01.60.80.80.60.51 : Emitte
2sd1958.pdf

Ordering number:EN2549ANPN Triple Diffused Planar Silicon Transistor2SD1958TV Horizontal Deflection OutputHigh-Current Switching ApplicationsFeatures Package Dimensions Excellent tf permitting efficient drive with lessunit:mminternal dissipation.2041A[2SD1958]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1052 | 2SB1188SQ-R | 3DD64 | 3DF5 | OC43N | DTA144WET1G | FT123
Keywords - 2SD1952 transistor datasheet
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History: 2SA1052 | 2SB1188SQ-R | 3DD64 | 3DF5 | OC43N | DTA144WET1G | FT123



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