2SD1997 - Даташиты. Аналоги. Основные параметры

Ordering number EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions Contains input resistance (R1), base-to-emitter unit mm resistance (RBE). 2038 Contains diode between collector and emitter. [2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making

SMD Type Transistors NPN Transistors 2SD1997 1.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB1323 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

Ordering number EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between collector and [2SB1324/2SD1998] emitter. Large current capacity. Small-sized package making it easy to

Ordering number EN3175 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1325/2SD1999 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between base and emitter. [2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol

Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.

Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut

Transistors 2SD1994A Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification and driver amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1322A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A +0.1 0.45-0.05 Allo

Transistors 2SD1992A Silicon NPN epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1321A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol

Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Unit mm Complementary to 2SB1321A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Par

Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1322A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 2 to 3W is obtained with a complementary pair with 0.65 max. 2SB1322A. Allowing supply with the radial ta

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Co

2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V

SMD Type Transistors NPN Transistors 2SD1998 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 0.46 0.1 Complementary to 2SB1324 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi

SMD Type Transistors NPN Transistors 2SD1999 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte