2SD1997 Datasheet and Replacement

Ordering number:EN3129PNP/NPN Epitaxial Planar Silicon Transistors2SB1323/2SD1997Compact Motor Driver ApplicationsFeatures Package Dimensions Contains input resistance (R1), base-to-emitterunit:mmresistance (RBE).2038 Contains diode between collector and emitter.[2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making

SMD Type TransistorsNPN Transistors2SD19971.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB13230.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

Ordering number:EN3130PNP/NPN Epitaxial Planar Silicon Transistors2SB1324/2SD1998Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between collector and[2SB1324/2SD1998]emitter. Large current capacity. Small-sized package making it easy to

Ordering number:EN3175PNP/NPN Epitaxial Planar Silicon Transistors2SB1325/2SD1999Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi

Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol

Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.

Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut

Transistors2SD1994ASilicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification and driver amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1322A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with2SB1322A+0.1 0.45-0.05 Allo

Transistors2SD1992ASilicon NPN epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SB1321A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol

Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol

Transistor2SD1992ASilicon NPN epitaxial planer typeFor low-frequency power strengthening and driveUnit: mmComplementary to 2SB1321A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Par

Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

Transistor2SD1994ASilicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB1322A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 2 to 3W is obtained with a complementary pair with0.65 max.2SB1322A.Allowing supply with the radial ta

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Co

2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V

SMD Type TransistorsNPN Transistors2SD19981.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.10.46 0.1 Complementary to 2SB1324 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi

SMD Type TransistorsNPN Transistors2SD19991.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base2.CollectorRBE 3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte