2SD2047 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD2047 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

Ordering number EN2752B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2049 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2049] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

Ordering number EN2751B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2048 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2048] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

2SD2046 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2046 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current ic (peak)

Equivalent C circuit B Darlington 2SD2045 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SD2045 Symbol Conditions 2SD2045 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 120 ICBO VCB=120

isc Silicon NPN Darlington Power Transistor 2SD2045 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of driver