2SD2047 Datasheet and Replacement

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isc Silicon NPN Power Transistor 2SD2047 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Ordering number EN2752B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2049 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2049] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi... See More ⇒

Ordering number EN2751B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2048 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2048] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi... See More ⇒

2SD2046 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2046 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current ic (peak)... See More ⇒

Equivalent C circuit B Darlington 2SD2045 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SD2045 Symbol Conditions 2SD2045 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 120 ICBO VCB=120... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD2045 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of driver... See More ⇒