2SD21 datasheet, аналоги, основные параметры
Наименование производителя: 2SD21
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
Аналоги (замена) для 2SD21
- подборⓘ биполярного транзистора по параметрам
2SD21 даташит
2sd2181.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request
2sd2130.pdf
2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between
2sd2198.pdf
Ordering number EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1449/2SD2198] cesses for 2SB1449/2SD2198-applied equipment. -High density surface mount applications. -Small size of
2sd2117.pdf
Ordering number EN3204 NPN Epitaxial Planar Silicon Transistor 2SD2117 General Driver Applications Features Package Dimensions Darlington connection. unit mm High DC current gain. 2064A Large current capacity, wide ASO. [2SD2117] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ra
2sd2199.pdf
Ordering number EN3150 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1450/2SD2199 50V/7A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1450/2SD2199] cesses for 2SB1450/2SD2199-applied equipment. -High density surface mount applications. -Small size of
2sd2120.pdf
Ordering number EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions Darlington connection (Contains bias resistance, unit mm damper diode). 2064A High DC current gain. [2SD2120] 2.5 Less dependence of DC current gain on temperature. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base
2sd2176.pdf
Ordering number EN3196 NPN Epitaxial Planar Silicon Transistor 2SD2176 Motor Driver Applications Features Package Dimensions Darlington connection. unit mm On-chip Zener diode of 60 10V between collector 2038A and base. [2SD2176] High inductive load handling capability. 4.5 Small-sized package. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector
2sd2116.pdf
Ordering number EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions Darlington connection. unit mm High DC current gain. 2064A Large current capacity, wide ASO. [2SD2116] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ra
2sd2100.pdf
Ordering number EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between base and emitter. [2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov
2sd2164.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT mm) for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, b
2sd2163.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) speed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor driv
2sd2161.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive ORDERING INFORMATION from the IC output. This transistor is ideal for motor drivers and Ordering Name Package solenoid drivers in such as OA and FA equipment.
2sd2165.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT mm) for high hFE. This transistor is ideal for simplifying drive circuits and 4.5 0.2 10.0 0.3 reducing power dissipation because its hFE is as high as that of
2sd2162.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATION from the IC output. This transistor is ideal for motor drivers and Ordering Name Package solenoid drivers in such as OA and FA equipment.
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)
2sd2114ks.pdf
High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 hFE = 1200 (Typ.) 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 0 0.1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.1 0.15-0.06 +0.1 0.4 -0
2sd2098 2sd2118 2sd2097.pdf
2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD2098 +0.2 VCE(sat) = 0.25V (Typ.) 4.5 -0.1 +0.2 1.5 1.6 0.1 -0.1 (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (1) (2) (3) 0.4+0.1 -0.05
2sd2167.pdf
2SD2167 Transistors Power Transistor (31 4V, 2A) 2SD2167 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 4.0 2) Zener diode has low voltage dispersion. 1.0 2.5 0.5 3) Strong protection against reverse power surges due (1) to low loads. (2) 4) PC=2 W (on 40 40 0.7mm ceramic board) (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitt
2sd2142.pdf
2SD2142K / 2SC2062S Transistors Transistors 2SD2470 (94L-570-D25) (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for ref
2sd2212 2sd2143 2sd1866.pdf
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)
2sd2114.pdf
Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures FExternal dimensions (Units mm) 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor (96-232-C107) 232 Transistors 2SD211
2sd2098 2sd2166.pdf
Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor (96-229-D204) 252 Trans
2sd2144s.pdf
2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Units mm) Features 2SD2114K 1) High DC current gain. 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) VCE (sat) = 0.18V (Typ.) +0.1 0.15
2sd2150.pdf
Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) 4.5+0.2 -0.1 IC / IB = 2A / 0.1A 1.5+0.2 1.6 0.1 -0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 Structure 0.4 0.1 1.5 0.1 1.5 0.1 Epitaxial planar type 3.0 0.2
2sd2170.pdf
2SD2170 Transistors Medium Power Transistor +20 (Motor, Relay drive) (90 , 2A) -10 2SD2170 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 4.0 2) Zener diode has low dispersion. 1.0 2.5 0.5 3) Strong protection against reverse power surges due to (1) "L" loads. (2) 4) Darlington connection for high DC current gain. (3) (1) Base(Gat
2sd2153.pdf
High gain amplifier transistor (25V, 2A) 2SD2153 Features Dimensions (Unit mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.0 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM MPT3 EIAJ SC-62 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collect
2sd2114k-s.pdf
2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty
2sd1867 2sd2195.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)
2sd2114k 2sd2144s.pdf
2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty
2sd2142k.pdf
2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit mm) Features 1) Darlington connection for a high hFE. SMT3 (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.1 2) High input impedance. 0.4 0.8 (3) Inner circuit (2) (1) C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector
2sd2143.pdf
Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2143 Features Dimensions (Unit mm) 1) Built-in zener diode between collector and base. 5.5 1.5 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9 C0.5 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limit
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)
2sd2185 e.pdf
Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.
2sd2177.pdf
Transistors 2SD2177 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1434 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Ccomplementary pair with 2SB1434 Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 1 2 3 Abso
2sd2179.pdf
Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1446 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum
2sd2185.pdf
Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.
2sd2179 e.pdf
Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1446 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum
2sd2178.pdf
Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Unit 1.15 0.2 1.15 0.2 Collecto
2sd2184 e.pdf
Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute
2sd2136.pdf
Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1416 7.5 0.2 4.5 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Allowing supply with the radial taping 0.7 0.1 0
2sd2133.pdf
Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Unit 1.15 0.2 1.15 0.2 Collector-base voltage (Emitter op
2sd2184.pdf
Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute
2sd2151.pdf
Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi
2sd2138.pdf
Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1418 and 2SB1418A 5.0 0.1 10.0 0.2 1.0 Features 90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0
2sd2177a e.pdf
Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3
2sd2177 e.pdf
Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1434 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1434. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum
2sd2139.pdf
Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0
2sd2136.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A
2sd2121.pdf
2SD2121(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V
2sd2104.pdf
2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 k 200 2 3 (Typ) (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 8A Col
2sd2106.pdf
2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 k 200 2 3 (Typ) (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 6A Colle
2sd2115.pdf
2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 2A Colle
2sd2108.pdf
2SD2108 Transient Thermal Resistance 10 3 TC = 25 C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance ( C/W)
2sd2102.pdf
2SD2102 Transient Thermal Resistance 10 3 TC = 25 C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance ( C/W)
2sd2122 2sd2123.pdf
2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit Collector to base voltage VC
2sd2124.pdf
2SD2124(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 ID 1. Base 3 2. Collector 3. Emitter S Type 12 6 k 0.5 k 4. Collector 3 (Typ) (Typ) L Type 3 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter
2sd2107.pdf
2SD2107 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 4A Collector peak current IC(peak) 8A Collector power d
2sd2101.pdf
2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 3 k 150 3 (Typ) (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7V Collector current IC 10 A Co
2sd2142.pdf
2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. A L High input impedance. 3 3 Top View C B MARKING 1 1 2 2 K E R1M D H J F G PACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R
2sd2114.pdf
2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. A L High Emitter-Base Voltage. VEBO=12V (Min.) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD2114-V 2SD2114-W Range 820 1800 1200 2700 D Marking BBV
2sd2150.pdf
2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 2 3 A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A E C Collector B C E 2 B D 1 F G Base H K J L 3
2sd2118.pdf
2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R A C B D Range 120 270 180 390 G E
2sd2150.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un
2sd2136.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR (NPN) TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTER Satisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device
2sd2153.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2153 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics 3. EMITTER MARKING DN MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO
2sd2137a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U
2sd2152.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD2152 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Low Saturation Medium Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage
2sd2101.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op
2sd2141.pdf
Equivalent circuit C Built-in Avalanche Diode B for Surge Absorbing Darlington 2SD2141 (1.5k )(100 ) E Silicon NPN Triple Diffused Planar Transistor Application Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2141 Symbol Conditions 2SD2141 Unit Un
2sd2142.pdf
2S 2142 D TRANSISOR (NPN) SOT 23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBO I Collector Current 300 mA C
2sd2114.pdf
2SD2114 TRANSISTOR (NPN) FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuou
2sd2137.pdf
2SD2137(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V
2sd2150.pdf
2SD2150 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Excellent current-to-gain characteristics 2.6 4.25 2.4 3.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)
2sd2118.pdf
2SD2118(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base
2sd2114 sot-23.pdf
2SD2114 SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING BBV,BBW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collec
2sd2137 to-220f.pdf
2SD2137(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60
2sd2150.pdf
2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 20 VEBO V Emitter-Base Voltage 6 Collector Current IC 3 A Collector Power Dissipation PD 500 mW Junction Temperature Tj 150 C Tstg -55 t
2sd2159.pdf
2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features Low saturation voltage. / Applications Medium power amplifier applications. / Equivalent Circuit / Pinning
2sd2166.pdf
2SD2166(BR3DA2166QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features , , 2SB1436(BR3CA1436QF) Low VCE(sat), excellent DC current gain, complements the 2SB1436(BR3CA1436QF). / Applications
st2sd2150u.pdf
ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature
l2sd2114kvlt1g.pdf
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low V CE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT 2
l2sd2114kwlt1g.pdf
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series 1) High DC current gain. hFE = 1200 (Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.) 2 (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements. SOT 23 (TO
2sd2121.pdf
SMD Type Transistors NPN Transistors 2SD2121 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low frequency power amplifier Complementary to 2SB1407 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sd2185.pdf
SMD Type Transistors NPN Transistors 2SD2185 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB1440 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V
2sd2167.pdf
SMD Type Transistors NPN Transistors 2SD2167 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=27V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 27 Collector - Emitter Voltage VCEO 27 V Emitter - Base Voltage VEBO
2sd2142.pdf
SMD Type Transistors NPN Transistors 2SD2142 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle
2sd2114.pdf
SMD Type Transistors NPN Transistors 2SD2114 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Base 1.Base 2.Emitter Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba
2sd2195.pdf
SMD Type Transistors NPN Transistors 2SD2195 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100V C Complementary to 2SB1580 0.42 0.1 0.46 0.1 B R1 R2 1.Base E R1 3.5k 2.Collector R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100
2sd2150.pdf
SMD Type Transistors NPN Transistors 2SD2150 1.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB1412 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V
2sd2170.pdf
SMD Type Transistors NPN Transistors 2SD2170 1.70 0.1 Features Built-in zener diode between collector and base. Zener diode has low dispersion. Darlington connection for high DC current gain. 0.42 0.1 0.46 0.1 Built-in resistor between base and emitter. C 1.Base 2.Collector 3.Emitter B R1 3.5k R2 300 R1 R2 E Absolute Maximum Ratings Ta = 25
2sd2153.pdf
SMD Type Transistors NPN Transistors 2SD2153 1.70 0.1 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25
2sd2176.pdf
SMD Type Transistors NPN Transistors 2SD2176 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
2sd2100.pdf
SMD Type Transistors NPN Transistors 2SD2100 1.70 0.1 Features Low saturation voltage Collector Large current cappacity 0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base 1.Base RBE 2.Collector 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt
2sd2173.pdf
RoHS 2SD2137 2SD2137 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM 2 W (Tamb=25 ) 3. EMITTER Collector current 1 2 3 ICM 3 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter
2sd2150r 2sd2150s.pdf
2SD2150 NPNGeneral use transistor 1.2W 3A 30V 4 Applications Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATING Parameters Symbol Rating Unit VCEO Collector emitter voltage IB=0 30 V VCBO V Collector base voltage IE=0 40 VEBO Emitter base voltage IC=0 5 V IC A Collector curren
2sd2125.pdf
isc Silicon NPN Power Transistor 2SD2125 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
2sd214.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD214 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli
2sd213.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD213 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applic
2sd2128.pdf
isc Silicon NPN Darlington Power Transistor 2SD2128 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for lo
2sd2104.pdf
I isc Silicon NPN Darlington Power Transistor 2SD2104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for lo
2sd2163.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2163 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for direct driving from the IC output of devices such as pulse motor
2sd2105.pdf
isc Silicon NPN Darlington Power Transistor 2SD2105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f
2sd2137.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2137 DESCRIPTION Silicon NPN triple diffusion planar type Complementary to 2SB1417 Low Collector to Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation Allowing supply with the radial taping APPLICATIONS Designed for power amplifiers ABSOLUTE MAXIMUM RATING
2sd2141.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2141 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = 3A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 4A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignitor
2sd2148.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD2148 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd2118.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2118 DESCRIPTION High current capacity Small and slim package making it easy to make 2SD2118-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobes,voltage regu
2sd2112.pdf
isc Silicon NPN Darlington Power Transistor 2SD2112 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f
2sd2106.pdf
isc Silicon NPN Darlington Power Transistor 2SD2106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f
2sd2161.pdf
isc Silicon NPN Darlington Power Transistor 2SD2161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 2A, I = 2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe
2sd2113.pdf
isc Silicon NPN Darlington Power Transistor 2SD2113 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for l
2sd2111.pdf
isc Silicon NPN Darlington Power Transistor 2SD2111 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for l
2sd211.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD211 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 40V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applic
2sd2140.pdf
isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXI
2sd2110.pdf
isc Silicon NPN Darlington Power Transistor 2SD2110 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr
2sd2108.pdf
isc Silicon NPN Darlington Power Transistor 2SD2108 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr
2sd2137a.pdf
isc Silicon NPN Power Transistor 2SD2137A DESCRIPTION Collector Emitter Sustaining Voltage V 80 V(Min) CEO Low Collector Saturation Voltage V = 1.2V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd2151.pdf
isc Silicon NPN Power Transistor 2SD2151 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sd2107.pdf
isc Silicon NPN Power Transistor 2SD2107 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sd218.pdf
isc Silicon NPN Power Transistor 2SD218 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(T =25
2sd2156.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2156 DESCRIPTION High DC Current gain Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D
2sd2129.pdf
isc Silicon NPN Darlington Power Transistor 2SD2129 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power swi
2sd2101.pdf
isc Silicon NPN Darlington Power Transistor 2SD2101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 5A CE(sat) C High DC Current Gain h = 1500(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f
2sd2196.pdf
isc Silicon NPN Darlington Power Transistor 2SD2196 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sd2143.pdf
isc Silicon NPN Power Transistors 2SD2143 DESCRIPTION DC Current Gain -h 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sd2165.pdf
isc Silicon NPN Darlington Power Transistor 2SD2165 DESCRIPTION High DC Current Gain- h = 800(MIN)@ (V = 5V, I = 1A) FE CE C Low Collector-Emitter Saturation Voltage V =1V(MIN)@ (I = 3V, I = 30mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use low frequency amplifilier and low switching speed a
2sd2155.pdf
isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SB1429 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency ampl
2sd2162.pdf
isc Silicon NPN Darlington Power Transistor 2SD2162 DESCRIPTION High hFE due to Darlington connection H 2,000 @(V = 2.0 V, I = 3.0 A) FE CE C Low Collector Saturation Voltage- V 1.5V @ (I =3A, I = 3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low- spe
Другие транзисторы: 2SD2093, 2SD2094, 2SD2095, 2SD2097, 2SD2098Q, 2SD2098R, 2SD2098S, 2SD2099, TIP31, 2SD2100, 2SD2101, 2SD2102, 2SD2103, 2SD2104, 2SD2105, 2SD2106, 2SD2107
History: DRC4143E
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