2SD21 Datasheet and Replacement

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between

Ordering number:EN3149PNP/NPN Epitaxial Planar Silicon Transistors2SB1449/2SD219850V/5A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1449/2SD2198]cesses for 2SB1449/2SD2198-applied equipment.-High density surface mount applications.-Small size of

Ordering number:EN3204NPN Epitaxial Planar Silicon Transistor2SD2117General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064A Large current capacity, wide ASO.[2SD2117]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

Ordering number:EN3150PNP/NPN Epitaxial Planar Silicon Transistors2SB1450/2SD219950V/7A Switching ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069B-Reduction in the number of manufacturing pro-[2SB1450/2SD2199]cesses for 2SB1450/2SD2199-applied equipment.-High density surface mount applications.-Small size of

Ordering number:EN3239NPN Epitaxial Planar Silicon Transistor2SD2120General Driver ApplicationsFeatures Package Dimensions Darlington connection (Contains bias resistance,unit:mmdamper diode).2064A High DC current gain.[2SD2120]2.5 Less dependence of DC current gain on temperature.1.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base

Ordering number:EN3196NPN Epitaxial Planar Silicon Transistor2SD2176Motor Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm On-chip Zener diode of 60 10V between collector2038Aand base.[2SD2176] High inductive load handling capability.4.5 Small-sized package.1.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector

Ordering number:EN3203NPN Epitaxial Planar Silicon Transistor2SD2116General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064A Large current capacity, wide ASO.[2SD2116]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov

DATA SHEETSILICON POWER TRANSISTOR2SD2164NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm)for high hFE. This transistor is ideal for simplifying drive circuits andreducing power dissipation because its hFE is as high as that ofDarlington transistors, b

DATA SHEETDARLINGTON POWER TRANSISTOR2SD2163NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS ANDLOW-SPEED HIGH-CURRENT SWITCHINGThe 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)speed high-current switching. This transistor is ideal for directdriving from the IC output of devices such as pulse motor driv

DATA SHEETSILICON POWER TRANSISTOR2SD2161NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2161 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.

DATA SHEETSILICON POWER TRANSISTOR2SD2165NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive circuits and 4.5 0.210.0 0.3reducing power dissipation because its hFE is as high as that of

DATA SHEETSILICON POWER TRANSISTOR2SD2162NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K2.90.21.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.10.80.10.95 0.952) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 00.13) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.10.15-0.06+0.10.4-0

2SD2098 / 2SD2118 / 2SD2097TransistorsLow VCE(sat) transistor (strobe flash)2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features1) Low VCE(sat).2SD2098+0.2VCE(sat) = 0.25V (Typ.) 4.5-0.1+0.21.51.60.1 -0.1(IC/IB = 4A / 0.1A)2) Excellent DC current gain characteristics.3) Complements the 2SB1386 / 2SB1412 / 2SB1326.(1) (2) (3)0.4+0.1-0.05

2SD2167TransistorsPower Transistor (314V, 2A)2SD2167 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.4.02) Zener diode has low voltage dispersion.1.0 2.5 0.53) Strong protection against reverse power surges due(1) to low loads.(2)4) PC=2 W (on 40400.7mm ceramic board) (3)(1) Base(Gate)(2) Collector(Drain)(3) Emitt

2SD2142K / 2SC2062STransistorsTransistors2SD2470(94L-570-D25)(SPEC-D230)316Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for ref

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

TransistorsHigh-current Gain Medium Power Transistor (20V, 0.5A)2SD2114K / 2SD2144SFFeatures FExternal dimensions (Units: mm)1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.VEBO = 12V (Min.)3) Low VCE(sat).VCE(sat) = 0.18V (Typ.)(IC / IB = 500mA / 20mA)FStructureEpitaxial planar typeNPN silicon transistor(96-232-C107)232Transistors 2SD211

TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans

2SD2114K / 2SD2144STransistorsHigh-current Gain MediumPower Transistor (20V, 0.5A)2SD2114K / 2SD2144S External dimensions (Units : mm) Features2SD2114K1) High DC current gain.2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.)0.80.10.95 0.952) High emitter-base voltage.(1) (2)00.1 VEBO =12V (Min.)3) Low VCE (sat).(3) VCE (sat) = 0.18V (Typ.)+0.10.15

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150VCE(sat) = 0.2V(Typ.) 4.5+0.2-0.1IC / IB = 2A / 0.1A 1.5+0.21.60.1 -0.12) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3)0.4+0.1-0.050.40.1 0.50.1 Structure 0.40.11.50.1 1.50.1Epitaxial planar type 3.00.2

2SD2170TransistorsMedium Power Transistor+20(Motor, Relay drive) (90 , 2A)-102SD2170 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.4.02) Zener diode has low dispersion.1.0 2.5 0.53) Strong protection against reverse power surges due to(1)"L" loads.(2)4) Darlington connection for high DC current gain. (3)(1) Base(Gat

High gain amplifier transistor (25V, 2A) 2SD2153 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.01.0 2.5 0.52) Excellent DC current gain characteristics. (1)(2)(3)(1) Base(2) Collector(3) EmitterROHM : MPT3EIAJ : SC-62Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollect

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.12) High input impedance. 0.4 0.8(3) Inner circuit (2) (1)C0.95 0.950.151.9(1)Emitter(2)BaseB Each lead has same dimensions(3)Collector

Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2143 Features Dimensions (Unit : mm) 1) Built-in zener diode between collector and base. 5.5 1.52) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9C0.5Absolute maximum ratings (Ta=25C) Parameter Symbol Limit

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistors2SD2177Silicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency output amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1434 Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Ccomplementary pair with 2SB1434 Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.51 2 3 Abso

Transistor2SD2179Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1446. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.

Transistor2SD2179Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1446. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Power Transistors2SD2137, 2SD2137ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1417 and 2SB1417AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity5.0 0.1Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0Allowing supply with the radial taping90Absolute Maximum Ratings (TC=25

Power Transistors2SD2178Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings Ta = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collecto

Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute

Power Transistors2SD2136Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB14167.50.2 4.50.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Allowing supply with the radial taping0.70.10

Power Transistors2SD2133Silicon NPN epitaxial planar typeFor low-frequency power amplification driverUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings TC = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collector-base voltage (Emitter op

Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute

Power Transistors2SD2151Silicon NPN epitaxial planar typeFor power switchingUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi

Power Transistors2SD2138, 2SD2138ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB1418 and 2SB1418A5.0 0.110.0 0.2 1.0Features90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

Transistor2SD2177ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3

Transistor2SD2177Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14342.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SB1434. 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum

Power Transistors2SD2139Silicon NPN triple diffusion planar typeFor high-current amplification ratio, power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A

2SD2121(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1407(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L TypeAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5V

2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol

2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle

2SD2115(L)/(S)Silicon NPN Epitaxial PlanarApplicationLow frequency power amplifierOutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L TypeAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 2AColle

2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)

2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)

2SD2122(L)/(S), 2SD2123(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1409(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SD2122(L)/(S), 2SD2123(L)/(S)Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) UnitCollector to base voltage VC

2SD2124(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineDPAK42, 44112ID1. Base3 2. Collector3. EmitterS Type 12 6 k 0.5 k4. Collector3(Typ) (Typ)L Type 32SD2124(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter

2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d

2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. AL High input impedance. 33Top View C BMARKING 11 22K ER1M DH JF GPACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. AL High Emitter-Base Voltage. VEBO=12V (Min.) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 DMarking BBV

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 23A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A ECCollector B C E 2 B D1 F GBase H KJ L3

2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R ACBDRange 120~270 180~390 G E

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SD2136 TRANSISTOR (NPN)TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTERSatisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2153 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics 3. EMITTER MARKING: DN MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD2152 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Low Saturation Medium Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op

Equivalent circuitCBuilt-in Avalanche Diode Bfor Surge AbsorbingDarlington 2SD2141(1.5k)(100)ESilicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2141 Symbol Conditions 2SD2141 UnitUn

2S 2142 DTRANSISOR (NPN)SOT23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBOI Collector Current 300 mA C

2SD2114TRANSISTOR (NPN)FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuou

2SD2137(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V

2SD2150SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR SOT-893. EMITTER 4.6B4.41.61.8Features1.41.4 Excellent current-to-gain characteristics 2.64.252.43.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN0.530.400.480.44 2x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SD2118(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesLow VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base

2SD2114 SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collec

2SD2137(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features High forward current transfer ratio hFE which hassatisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60

2SD2150NPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 20VEBOVEmitter-Base Voltage 6Collector Current IC 3 ACollector Power Dissipation PD 500 mWJunction TemperatureTj150CTstg -55 t

2SD2150(BR3DG2150T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SB1424(BR3CG1424T)Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424(BR3CG1424T). / Applications

2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features Low saturation voltage. / Applications Medium power amplifier applications. / Equivalent Circuit / Pinning

2SD2166(BR3DA2166QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, 2SB1436(BR3CA1436QF) Low VCE(sat), excellent DC current gain, complements the 2SB1436(BR3CA1436QF). / Applications

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistorL2SD2114KVLT1G Series FeaturesS-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.3VEBO =12V (Min.)3) Low VCE (sat).1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 2

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)32) High emitter-base voltage.VEBO =12V (Min.)3) Low VCE (sat). 1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 23 (TO

SMD Type TransistorsNPN Transistors2SD2121TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features 0.50 -0.7 Low frequency power amplifier Complementary to 2SB14070.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SD2185SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB14400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V

SMD Type TransistorsNPN Transistors2SD2167SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=27V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 27 Collector - Emitter Voltage VCEO 27 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD2142SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=32V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

SMD Type TransistorsNPN Transistors2SD2114SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=500mACollector Collector Emitter Voltage VCEO=20V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Base1.Base2.EmitterEmitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SD2195SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=100VC Complementary to 2SB15800.42 0.10.46 0.1BR1 R2 1.BaseER1 3.5k2.CollectorR2 3003.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100

SMD Type TransistorsNPN Transistors2SD21501.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB14120.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

SMD Type TransistorsNPN Transistors2SD21701.70 0.1 Features Built-in zener diode between collector and base. Zener diode has low dispersion. Darlington connection for high DC current gain.0.42 0.10.46 0.1 Built-in resistor between base and emitter.C1.Base2.Collector3.EmitterBR1 3.5kR2 300 R1 R2E Absolute Maximum Ratings Ta = 25

SMD Type TransistorsNPN Transistors2SD21531.70 0.1 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25

SMD Type TransistorsNPN Transistors2SD2176SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt

RoHS 2SD2137 2SD2137 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25) 3. EMITTER Collector current 1 2 3 ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter

2SD2150NPNGeneral use transistor1.2W 3A 30V 4ApplicationsCan be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATINGParameters Symbol RatingUnit VCEO Collectoremitter voltageIB=0 30 V VCBO V Collectorbase voltageIE=0 40 VEBO Emitter base voltageIC=0 5 V IC A Collector curren

isc Silicon NPN Power Transistor 2SD2125DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD214DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD213DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic

isc Silicon NPN Darlington Power Transistor 2SD2128DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo

Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2163DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for direct driving from the IC output of devicessuch as pulse motor

isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2137DESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417Low Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATING

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2141DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignitor

isc Product Specificationisc Silicon NPN Power Transistor 2SD2148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2118DESCRIPTIONHigh current capacitySmall and slim package making it easy to make 2SD2118-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobes,voltage regu

isc Silicon NPN Darlington Power Transistor 2SD2112DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

isc Silicon NPN Darlington Power Transistor 2SD2161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 2A, I = 2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne

isc Silicon NPN Darlington Power Transistor 2SD2113DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for l

isc Silicon NPN Darlington Power Transistor 2SD2111DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for l

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD211DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 40V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic

isc Silicon NPN Power Transistor 2SD2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAXI

isc Silicon NPN Darlington Power Transistor 2SD2110DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr

isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr

isc Silicon NPN Power Transistor 2SD2137ADESCRIPTIONCollectorEmitter Sustaining VoltageV 80 V(Min)CEO:Low Collector Saturation Voltage: V = 1.2V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD2151DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD218DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow saturation voltageExcellent current gain linearityABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2156DESCRIPTIONHigh DC Current gainLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

isc Silicon NPN Darlington Power Transistor 2SD2129DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power swi

isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

isc Silicon NPN Darlington Power Transistor 2SD2196DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistors 2SD2143DESCRIPTIONDC Current Gain -h :1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD2165DESCRIPTIONHigh DC Current Gain-: h = 800(MIN)@ (V = 5V, I = 1A)FE CE CLow Collector-Emitter Saturation Voltage: V =1V(MIN)@ (I = 3V, I = 30mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use low frequency amplifilier and lowswitching speed a

isc Silicon NPN Power Transistor 2SD2155DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SB1429Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl

isc Silicon NPN Darlington Power Transistor 2SD2162DESCRIPTIONHigh hFE due to Darlington connection: H 2,000 @(V = 2.0 V, I = 3.0 A)FE CE CLow Collector Saturation Voltage-: V 1.5V @ (I =3A, I = 3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-spe