2SD2130 datasheet и подбор замены

 ..1. Size:209K  toshiba
 2sd2130.pdf 

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between

 8.1. Size:240K  toshiba
 2sd2131.pdf 

 8.2. Size:54K  panasonic
 2sd2137.pdf 

 8.3. Size:86K  panasonic
 2sd2136.pdf 

Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1416 7.5 0.2 4.5 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Allowing supply with the radial taping 0.7 0.1 0

 8.4. Size:96K  panasonic
 2sd2133.pdf 

Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Unit 1.15 0.2 1.15 0.2 Collector-base voltage (Emitter op

 8.5. Size:61K  panasonic
 2sd2138.pdf 

Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1418 and 2SB1418A 5.0 0.1 10.0 0.2 1.0 Features 90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0

 8.6. Size:50K  panasonic
 2sd2139.pdf 

Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0

 8.7. Size:164K  utc
 2sd2136.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A

 8.8. Size:429K  jiangsu
 2sd2136.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR (NPN) TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTER Satisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device

 8.9. Size:105K  jiangsu
 2sd2137a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

 8.10. Size:233K  lge
 2sd2137.pdf 

2SD2137(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V

 8.11. Size:161K  lge
 2sd2137 to-220f.pdf 

2SD2137(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60

 8.12. Size:193K  inchange semiconductor
 2sd213.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD213 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applic

 8.13. Size:211K  inchange semiconductor
 2sd2137.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2137 DESCRIPTION Silicon NPN triple diffusion planar type Complementary to 2SB1417 Low Collector to Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation Allowing supply with the radial taping APPLICATIONS Designed for power amplifiers ABSOLUTE MAXIMUM RATING

 8.14. Size:280K  inchange semiconductor
 2sd2137a.pdf 

isc Silicon NPN Power Transistor 2SD2137A DESCRIPTION Collector Emitter Sustaining Voltage V 80 V(Min) CEO Low Collector Saturation Voltage V = 1.2V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB