2SD2130 Datasheet PDF and Equivalents Search

 ..1. Size:209K  toshiba

 2sd2130.pdf

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between ... See More ⇒

 8.1. Size:240K  toshiba

 2sd2131.pdf

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 8.2. Size:54K  panasonic

 2sd2137.pdf

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 8.3. Size:86K  panasonic

 2sd2136.pdf

Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Unit mm Complementary to 2SB1416 7.5 0.2 4.5 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Allowing supply with the radial taping 0.7 0.1 0... See More ⇒

 8.4. Size:96K  panasonic

 2sd2133.pdf

Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Unit 1.15 0.2 1.15 0.2 Collector-base voltage (Emitter op... See More ⇒

 8.5. Size:61K  panasonic

 2sd2138.pdf

Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1418 and 2SB1418A 5.0 0.1 10.0 0.2 1.0 Features 90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0... See More ⇒

 8.6. Size:50K  panasonic

 2sd2139.pdf

Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0... See More ⇒

 8.7. Size:164K  utc

 2sd2136.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A... See More ⇒

 8.8. Size:429K  jiangsu

 2sd2136.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR (NPN) TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTER Satisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device ... See More ⇒

 8.9. Size:105K  jiangsu

 2sd2137a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U... See More ⇒

 8.10. Size:233K  lge

 2sd2137.pdf

2SD2137(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V... See More ⇒

 8.11. Size:161K  lge

 2sd2137 to-220f.pdf

2SD2137(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 ... See More ⇒

 8.12. Size:193K  inchange semiconductor

 2sd213.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD213 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applic... See More ⇒

 8.13. Size:211K  inchange semiconductor

 2sd2137.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2137 DESCRIPTION Silicon NPN triple diffusion planar type Complementary to 2SB1417 Low Collector to Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation Allowing supply with the radial taping APPLICATIONS Designed for power amplifiers ABSOLUTE MAXIMUM RATING... See More ⇒

 8.14. Size:280K  inchange semiconductor

 2sd2137a.pdf

isc Silicon NPN Power Transistor 2SD2137A DESCRIPTION Collector Emitter Sustaining Voltage V 80 V(Min) CEO Low Collector Saturation Voltage V = 1.2V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒