2SD2144 - Даташиты. Аналоги. Основные параметры

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Units mm) Features 2SD2114K 1) High DC current gain. 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) VCE (sat) = 0.18V (Typ.) +0.1 0.15

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit mm) Features 1) High DC current gain. 2SD2114K 2.9 0.2 1.1+0.2 1.9 0.2 -0.1 hFE = 1200 (Typ.) 0.8 0.1 0.95 0.95 2) High emitter-base voltage. (1) (2) 0 0.1 VEBO =12V (Min.) 3) Low VCE (sat). (3) +0.1 VCE (sat) = 0.18V (Ty

2SD2142K / 2SC2062S Transistors Transistors 2SD2470 (94L-570-D25) (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for ref

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit mm) Features 1) Darlington connection for a high hFE. SMT3 (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.1 2) High input impedance. 0.4 0.8 (3) Inner circuit (2) (1) C 0.95 0.95 0.15 1.9 (1)Emitter (2)Base B Each lead has same dimensions (3)Collector

Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2143 Features Dimensions (Unit mm) 1) Built-in zener diode between collector and base. 5.5 1.5 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9 C0.5 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limit

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. A L High input impedance. 3 3 Top View C B MARKING 1 1 2 2 K E R1M D H J F G PACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

Equivalent circuit C Built-in Avalanche Diode B for Surge Absorbing Darlington 2SD2141 (1.5k )(100 ) E Silicon NPN Triple Diffused Planar Transistor Application Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2141 Symbol Conditions 2SD2141 Unit Un

2S 2142 D TRANSISOR (NPN) SOT 23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBO I Collector Current 300 mA C

SMD Type Transistors NPN Transistors 2SD2142 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD214 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2141 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = 3A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 4A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignitor

isc Product Specification isc Silicon NPN Power Transistor 2SD2148 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXI

isc Silicon NPN Power Transistors 2SD2143 DESCRIPTION DC Current Gain -h 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR