2SD2220 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit mm 7.5 0.2 4.5 0.2 90 Features 0.65 0.1 0.85 0.1 Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward 1.0 0.1 0.8C 0.8C current transfer ratio hFE 0.7 0.1 0.7 0.1 A shunt r

Ordering number EN3366 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1472/2SD2224 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049B [2SB1472/2SD2224] Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. E

Ordering number EN3365 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1471/2SD2223 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049B [2SB1471/2SD2223] Features Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. E

2SD2226K Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-346 Parameter Value SC-59 VCEO 50V IC 150mA SMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l Low frequency amplifier lPackagi

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base

Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1473 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maxim

Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1473 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maxim

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2222 DESCRIPTION With TO-3PL package Complement to type 2SB1470 High forward current transfer ratio hFE Low saturation voltage VCE(sat) DARLINGTON APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out

isc Silicon NPN Darlington Power Transistor 2SD2222 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High DC Current Gain- h = 3500( Min.) @(I = 7A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 3.0V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1470 Minimum Lot-to-Lot variations for robust device performance and reliable op