2SD2232 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2232 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 3000(Min) @ I = 5A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOL

DATA SHEET SILICON TRANSISTOR 2SD2230 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD2230 is an element realizing ultra low VCE(sat). This PACKAGE DRAWING (UNIT mm) transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES Low VCE(sat) VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA,

SMD Type Transistors NPN Transistors 2SD2230 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=16V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION High DC Current Gain- hFE = 2000(Min)@ IC= 2A Low Collector Saturation Voltage- VCE(sat) = 2.0V(Max.) @IC= 5A Complement to Type 2SB1478 APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PAR

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base