2SD2232 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2232DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 3000(Min) @ I = 5A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOL

DATA SHEETSILICON TRANSISTOR2SD2230NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD2230 is an element realizing ultra low VCE(sat). This PACKAGE DRAWING (UNIT: mm)transistor is ideal for muting such as stereo recorders, VCRs,and TVs.FEATURES Low VCE(sat):VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mAVCE(sat)2 = 150 mV TYP. @IC = 500 mA,

SMD Type TransistorsNPN Transistors2SD2230SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=16V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 16 Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION High DC Current Gain- : hFE = 2000(Min)@ IC= 2A Low Collector Saturation Voltage- : VCE(sat) = 2.0V(Max.) @IC= 5A Complement to Type 2SB1478 APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base