Биполярный транзистор 2SD2342 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2342
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO3P
2SD2342 Datasheet (PDF)
2sd2345.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2345 e.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
2sd2340.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudior
2sd2348.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2348DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd234.pdf
isc Silicon NPN Power Transistor 2SD234DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI
2sd2349.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2349DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050