2SD331E - аналоги, параметры транзистора - Справочник транзисторов

2SD331E даташит

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta

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Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos

9.3. Size:196K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD338 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose