2SD331E Datasheet. Specs and Replacement

Type Designator: 2SD331E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

 2SD331E Substitution

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2SD331E datasheet

 8.1. Size:189K  inchange semiconductor

 2sd331.pdf pdf_icon

2SD331E

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta... See More ⇒

 9.1. Size:33K  sanyo

 2sd330.pdf pdf_icon

2SD331E

Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector... See More ⇒

 9.2. Size:197K  inchange semiconductor

 2sd339.pdf pdf_icon

2SD331E

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos... See More ⇒

 9.3. Size:196K  inchange semiconductor

 2sd338.pdf pdf_icon

2SD331E

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD338 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

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Detailed specifications: 2SD330, 2SD330C, 2SD330D, 2SD330E, 2SD330F, 2SD331, 2SD331C, 2SD331D, TIP41C, 2SD331F, 2SD332, 2SD334, 2SD334A, 2SD335, 2SD336, 2SD338, 2SD338-1

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