2SD340-2 - аналоги и даташиты биполярного транзистора

 

2SD340-2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: 2SD340-2
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 120 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO3

 Аналоги (замена) для 2SD340-2

 

2SD340-2 Datasheet (PDF)

 9.1. Size:188K  inchange semiconductor
2sd343.pdfpdf_icon

2SD340-2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 9.2. Size:180K  inchange semiconductor
2sd348.pdfpdf_icon

2SD340-2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 9.3. Size:199K  inchange semiconductor
2sd347.pdfpdf_icon

2SD340-2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 9.4. Size:188K  inchange semiconductor
2sd345.pdfpdf_icon

2SD340-2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

Другие транзисторы... 2SD338-1 , 2SD338-2 , 2SD339 , 2SD339-1 , 2SD339-2 , 2SD34 , 2SD340 , 2SD340-1 , A1015 , 2SD341 , 2SD341H , 2SD342 , 2SD343 , 2SD344 , 2SD345 , 2SD346 , 2SD347 .

History: INA5008AH1 | BDX28

 

 
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