Справочник транзисторов. 2SD348

 

Биполярный транзистор 2SD348 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD348
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 405
   Корпус транзистора: TO3

 Аналоги (замена) для 2SD348

 

 

2SD348 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
2sd348.pdf

2SD348
2SD348

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD348DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

 9.1. Size:188K  inchange semiconductor
2sd343.pdf

2SD348
2SD348

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

 9.2. Size:199K  inchange semiconductor
2sd347.pdf

2SD348
2SD348

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a

 9.3. Size:188K  inchange semiconductor
2sd345.pdf

2SD348
2SD348

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD345DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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