2SD5018. Аналоги и основные параметры
Наименование производителя: 2SD5018
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 275 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: TO220
Аналоги (замена) для 2SD5018
- подборⓘ биполярного транзистора по параметрам
2SD5018 даташит
8.1. Size:208K inchange semiconductor
2sd5011.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
9.3. Size:189K inchange semiconductor
2sd5072.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT
9.4. Size:183K inchange semiconductor
2sd504.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD504 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. A
9.5. Size:188K inchange semiconductor
2sd5074.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5074 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.6. Size:188K inchange semiconductor
2sd5075.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5075 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.7. Size:189K inchange semiconductor
2sd5071.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5071 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT
9.8. Size:183K inchange semiconductor
2sd506.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 DESCRIPTION High DC current gain- h = 750 (Min) @ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications.
9.9. Size:188K inchange semiconductor
2sd5076.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5076 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.10. Size:116K inchange semiconductor
2sd5075t.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo
9.11. Size:232K inchange semiconductor
2sd5070.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage
Другие транзисторы: 2SD495, 2SD496, 2SD497, 2SD498, 2SD499, 2SD50, 2SD500, 2SD501, BC337, 2SD502, 2SD503, 2SD504, 2SD5041, 2SD5041O, 2SD5041P, 2SD5041Q, 2SD505
