2SD5018 Specs and Replacement

Type Designator: 2SD5018

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 275 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO220

 2SD5018 Substitution

- BJT ⓘ Cross-Reference Search

 

2SD5018 datasheet

 8.1. Size:208K  inchange semiconductor

2sd5011.pdf pdf_icon

2SD5018

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage ... See More ⇒

 9.1. Size:85K  usha

2sd5041.pdf pdf_icon

2SD5018

Transistors 2SD5041 ... See More ⇒

 9.2. Size:207K  jilin sino

2sd5032.pdf pdf_icon

2SD5018

... See More ⇒

 9.3. Size:189K  inchange semiconductor

2sd5072.pdf pdf_icon

2SD5018

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5072 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: 2SD495, 2SD496, 2SD497, 2SD498, 2SD499, 2SD50, 2SD500, 2SD501, BC337, 2SD502, 2SD503, 2SD504, 2SD5041, 2SD5041O, 2SD5041P, 2SD5041Q, 2SD505

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