Биполярный транзистор 2SD502 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD502
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 3000
Корпус транзистора: TO3
2SD502 Datasheet (PDF)
2sd5032.pdf
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2sd5072.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5072DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
2sd504.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD504DESCRIPTIONHigh DC current gain-h = 750 (Min) @ I = 6AFE CCollector-Emitter Sustaining Voltage-V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching applications.A
2sd5011.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
2sd5074.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5074DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5075.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5075DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5071.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5071DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT
2sd506.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD506DESCRIPTIONHigh DC current gain-h = 750 (Min) @ I = 6AFE CCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching applications.
2sd5076.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5076DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd5075t.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo
2sd5070.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .