All Transistors. 2SD502 Datasheet

 

2SD502 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD502
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO3

 2SD502 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD502 Datasheet (PDF)

 9.1. Size:85K  usha
2sd5041.pdf

2SD502 2SD502

Transistors2SD5041

 9.2. Size:207K  jilin sino
2sd5032.pdf

2SD502

www.DataSheet4U.comR NO>e'Y{X[vSgWvfSO{ D5032 NTyr'` %S:VCBO=1500V %qTSMNO:VCE(sat)=3V(max.) %_sQ^:tf=1S(max.) %S`'` %sORoHSNT ;N(u %i_r5u:gLQ5u _~z^SSI{He5u i 3DD5032 /f N

 9.3. Size:189K  inchange semiconductor
2sd5072.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5072DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

 9.4. Size:183K  inchange semiconductor
2sd504.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD504DESCRIPTIONHigh DC current gain-h = 750 (Min) @ I = 6AFE CCollector-Emitter Sustaining Voltage-V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching applications.A

 9.5. Size:208K  inchange semiconductor
2sd5011.pdf

2SD502 2SD502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage

 9.6. Size:188K  inchange semiconductor
2sd5074.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5074DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.7. Size:188K  inchange semiconductor
2sd5075.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5075DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.8. Size:189K  inchange semiconductor
2sd5071.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5071DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

 9.9. Size:183K  inchange semiconductor
2sd506.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD506DESCRIPTIONHigh DC current gain-h = 750 (Min) @ I = 6AFE CCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low frequencyswitching applications.

 9.10. Size:188K  inchange semiconductor
2sd5076.pdf

2SD502 2SD502

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5076DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.11. Size:116K  inchange semiconductor
2sd5075t.pdf

2SD502 2SD502

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075T DESCRIPTION With TO-220C package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo

 9.12. Size:232K  inchange semiconductor
2sd5070.pdf

2SD502 2SD502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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