Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mount

isc Silicon NPN Power Transistor 2SD600DESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLU

Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEOHigh VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

isc Silicon NPN Power Transistor 2SD600KDESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSO