All Transistors. 2SD600 Datasheet

 

2SD600 Datasheet and Replacement


   Type Designator: 2SD600
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 2SD600 Substitution

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2SD600 Datasheet (PDF)

 ..1. Size:126K  sanyo
2sd600.pdf pdf_icon

2SD600

Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K

 ..2. Size:195K  inchange semiconductor
2sd600 2sd600k.pdf pdf_icon

2SD600

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mount

 ..3. Size:214K  inchange semiconductor
2sd600.pdf pdf_icon

2SD600

isc Silicon NPN Power Transistor 2SD600DESCRIPTIONHigh Collector Current-I = 1.0ACHigh Collector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB631Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLU

 0.1. Size:115K  sanyo
2sd600k.pdf pdf_icon

2SD600

Ordering number:346GPNP/NPN Epitaxial Planar Silicon Transistor2SB631,631K/2SD600,600K100V/120V, 1A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High breakdown voltage VCEO 100/120V, Highunit:mmcurrent 1A.2009B Low saturation voltage, excellent hFE linearity.[2SB631, 631K/2SD600, 600K]1 : Emitter2 : Collector3 : Base( ) : 2SB631, 631K

Datasheet: 2SD596DV5 , 2SD596V1 , 2SD596V2 , 2SD596V3 , 2SD597 , 2SD598 , 2SD599 , 2SD60 , NJW0281G , 2SD600D , 2SD600E , 2SD600F , 2SD600K , 2SD600KD , 2SD600KE , 2SD600KF , 2SD601 .

History: NSS20501UW3 | DTD123EK | MJ420 | UMC3NT1G

Keywords - 2SD600 transistor datasheet

 2SD600 cross reference
 2SD600 equivalent finder
 2SD600 lookup
 2SD600 substitution
 2SD600 replacement

 

 
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