2SD635 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD635DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit

Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45

Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45

Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD632DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD633DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD634DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p